| No. |
Part Name |
Description |
Manufacturer |
| 91 |
ASB0320BF |
20 V, 350 mA, SMD schottky barrier diode |
Anachip |
| 92 |
ASB0330BD |
30 V, 350 mA, SMD schottky barrier diode |
Anachip |
| 93 |
ASB0330BF |
30 V, 350 mA, SMD schottky barrier diode |
Anachip |
| 94 |
ASB0340BD |
40 V, 350 mA, SMD schottky barrier diode |
Anachip |
| 95 |
ASB0340BF |
40 V, 350 mA, SMD schottky barrier diode |
Anachip |
| 96 |
AT-109 |
Frequency 0.5-2 GHz, 35dB, voltage variable absorptive attenuator |
MA-Com |
| 97 |
AT-109 |
Voltage Variable Absorptive Attenuator, 35 dB 0.5 - 2 GHz |
Tyco Electronics |
| 98 |
AT-109RTR |
Frequency 0.5-2 GHz, 35dB, voltage variable absorptive attenuator |
MA-Com |
| 99 |
AT-109RTR |
Voltage Variable Absorptive Attenuator, 35 dB 0.5 - 2 GHz |
Tyco Electronics |
| 100 |
AT-109TR |
Frequency 0.5-2 GHz, 35dB, voltage variable absorptive attenuator |
MA-Com |
| 101 |
AT-109TR |
Voltage Variable Absorptive Attenuator, 35 dB 0.5 - 2 GHz |
Tyco Electronics |
| 102 |
AT-635 |
DC-2 GHz, 35 dB, voltage variable absorptive attenuator |
MA-Com |
| 103 |
AT-635 |
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
Tyco Electronics |
| 104 |
AT-635PIN |
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
Tyco Electronics |
| 105 |
AT-635TR |
DC-2 GHz, 35 dB, voltage variable absorptive attenuator |
MA-Com |
| 106 |
AT-635TR |
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB DC - 2 GHz |
Tyco Electronics |
| 107 |
ATP201 |
N-Channel Power MOSFET, 30V, 35A, 17mOhm, Single ATPAK |
ON Semiconductor |
| 108 |
ATP212 |
N-Channel Power MOSFET, 60V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
| 109 |
ATP216 |
N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK |
ON Semiconductor |
| 110 |
BF495 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 125 hFE |
Continental Device India Limited |
| 111 |
BF495D |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE |
Continental Device India Limited |
| 112 |
BF959 |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35 - hFE |
Continental Device India Limited |
| 113 |
BGR269 |
200 MHz, 35 dB gain reverse amplifier |
NXP Semiconductors |
| 114 |
BTA08-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 8.0 A IT(RMS) |
ON Semiconductor |
| 115 |
BTA12-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 12 A IT(RMS) |
ON Semiconductor |
| 116 |
BTA16-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 16 A IT(RMS) |
ON Semiconductor |
| 117 |
BTA25-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 25 A IT(RMS) |
ON Semiconductor |
| 118 |
BTA30-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 35 A IT(RMS) |
ON Semiconductor |
| 119 |
BTA30-600CW3 |
Triac, 3 Quadrant Internally Isolated, 35 mA IGT, 35 A IT(RMS) |
ON Semiconductor |
| 120 |
BU921ZP |
NPN power transistor for automotive ignition applications, 350V, 16A |
SGS Thomson Microelectronics |
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