No. |
Part Name |
Description |
Manufacturer |
91 |
28F200B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
92 |
28F320B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
93 |
28F320C3 |
3 VOLT ADVANCED+ BOOT BLOCK, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
94 |
28F400B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
95 |
28F400B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
96 |
28F400B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
97 |
28F800B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
98 |
28F800B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
99 |
28F800B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
100 |
28F800C3 |
3 VOLT ADVANCED+ BOOT BLOCK, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
101 |
2N2219 |
30V (2N2219) 50V (2N2219A, 2N2219AL), 800mA NPN Small Signal Transistor |
ON Semiconductor |
102 |
2N2222A |
50V, 800mA NPN Small Signal Transistor - TO-18 |
ON Semiconductor |
103 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
104 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
105 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
106 |
2N4900 |
Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. |
Motorola |
107 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
108 |
2N6316 |
Power NPN silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
109 |
2N6318 |
Power PNP silicon transistor. 7.0 A, 80 V, 90 W. |
Motorola |
110 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
111 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
112 |
2N6718 |
0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
113 |
2N6728 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
114 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
115 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
116 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
117 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
118 |
2SC2484 |
Silicon NPN epitaxial base mesa transistor, 80V, 5A |
Panasonic |
119 |
2SC2558K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080190 series is also the datasheet of 2SC2558K, see the Electrical Characteristics table) |
NEC |
120 |
2SC2558M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080191 series is also the datasheet of 2SC2558M, see the Electrical Characteristics table) |
NEC |
| | | |