| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 92 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 93 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 94 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 95 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
| 96 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
| 97 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 98 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 99 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
| 100 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
| 101 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 102 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 103 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 104 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 105 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 106 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 107 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 108 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 109 |
2N7002-G |
MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 110 |
2N7002-HF |
Halogen Free MOSFET, VDS=60V, ID=0.25A, PD=350mW |
Comchip Technology |
| 111 |
2N7002K-HF |
Halogen Free MOSFET, VDS=60V, ID=0.115A, PD=225mW |
Comchip Technology |
| 112 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 113 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 114 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 115 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 116 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 117 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 118 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 119 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
| 120 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
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