No. |
Part Name |
Description |
Manufacturer |
91 |
HSMS-280C |
HSMS-280C · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
92 |
HSMS-280C |
HSMS-280C · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
93 |
HSMS-280E |
HSMS-280E · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
94 |
HSMS-280E |
HSMS-280E · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
95 |
HSMS-280F |
HSMS-280F · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
96 |
HSMS-280F |
HSMS-280F · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
97 |
HSMS-280K |
HSMS-280K · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
98 |
HSMS-280K |
HSMS-280K · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
99 |
HSMS-280L |
HSMS-280L · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
100 |
HSMS-280L |
HSMS-280L · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
101 |
HSMS-280M |
HSMS-280M · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
102 |
HSMS-280M |
HSMS-280M · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
103 |
HSMS-280N |
HSMS-280N · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
104 |
HSMS-280N |
HSMS-280N · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
105 |
HSMS-280P |
HSMS-280P · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
106 |
HSMS-280P |
HSMS-280P · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
107 |
HSMS-280R |
HSMS-280R · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
108 |
HSMS-280R |
HSMS-280R · Low reverse leakage Schottky diode |
Agilent (Hewlett-Packard) |
109 |
ISPLSI2064VE-280LB100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
110 |
ISPLSI2064VE-280LT100 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
111 |
ISPLSI2064VE-280LT44 |
280 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
112 |
LX8815-2800CDF |
Dual Channel 1A Low Dropout Regulator |
Microsemi |
113 |
MAX6715UTLTD3-T |
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
114 |
MAX6715UTMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
115 |
MAX6715UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
116 |
MAX6715UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
117 |
MAX6715UTRHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
118 |
MAX6715UTRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
119 |
MAX6715UTRYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
120 |
MAX6715UTSDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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