No. |
Part Name |
Description |
Manufacturer |
91 |
P4C1024-35J3C |
35 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
92 |
P4C1024-35J3I |
35 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
93 |
P4C1024-35J4C |
35 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
94 |
P4C1024-35J4I |
35 ns, static CMOS RAM, 128 K x 8 high speed |
Performance Semiconductor Corporation |
95 |
P4C116-35JC |
35 ns,Static CMOS RAM, 2 K x 8 ultra high speed |
Performance Semiconductor Corporation |
96 |
P4C1256-35JC |
35 ns, static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
97 |
P4C1256-35JI |
35 ns, static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
98 |
P4C163-35JC |
35 ns,resettable static CMOS RAM, 8 K x 9 ultra high speed |
Performance Semiconductor Corporation |
99 |
P4C164-35JI |
35 ns,static CMOS RAM, 8 K x 8 ultra high speed |
Performance Semiconductor Corporation |
100 |
P4C187-35JI |
35 ns,static CMOS RAM, 64 K x 1 ultra high speed |
Performance Semiconductor Corporation |
101 |
P4C188-35JI |
35 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
102 |
P4C198-35JI |
35 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
103 |
P4C1981-35JI |
35 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
104 |
P4C1981L-35JI |
35 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
105 |
P4C1982-35JI |
35 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
106 |
P4C1982L-35JI |
35 ns,static CMOS RAM, 16 K x 4 ultra high speed |
Performance Semiconductor Corporation |
107 |
T15L256A-35J |
32K X 8 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
108 |
T15L256A-35J |
35ns; -0.5 to 4.6V; 0.5W; 32 x 8 high speed CMOS static RAM |
TM Technology |
109 |
T15M256A-35J |
32K X 8 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
110 |
T15M256A-35J |
-0.5 to 6V; 0.5W; 32 x 8 low power CMOS static RAM |
TM Technology |
111 |
T221160A-35J |
64K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
112 |
T221160A-35J |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
113 |
T224162-35J |
256K x 16 DRAM EDO page mode, 35ns |
TM Technology |
114 |
WS57C191C-35J |
HIGH SPEED 2K x 8 CMOS PROM/RPROM |
ST Microelectronics |
115 |
WS57C256F-35J |
HIGH SPEED 32K x 8 CMOS EPROM |
ST Microelectronics |
116 |
WS57C43C-35J |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
ST Microelectronics |
117 |
WS57C43C-35JI |
HIGH SPEED 4K x 8 CMOS PROM/RPROM |
ST Microelectronics |
118 |
WS57C49C-35J |
HIGH SPEED 8K x 8 CMOS PROM/RPROM |
ST Microelectronics |
119 |
WS57C71C-35J |
HIGH SPEED 32K x 8 CMOS PROM/RPROM |
ST Microelectronics |
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