| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2211-400G |
data delay devices |
Data Delay Devices Inc |
| 92 |
2211-40C |
data delay devices |
Data Delay Devices Inc |
| 93 |
2211-40C |
FIXED DIP DELAY LINE |
Data Delay Devices Inc |
| 94 |
2214-400B |
data delay devices |
Data Delay Devices Inc |
| 95 |
2214-400B |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 96 |
2214-400C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 97 |
2214-400C |
data delay devices |
Data Delay Devices Inc |
| 98 |
2214-400D |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 99 |
2214-400D |
data delay devices |
Data Delay Devices Inc |
| 100 |
2214-400G |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 101 |
2214-400G |
data delay devices |
Data Delay Devices Inc |
| 102 |
2214-40C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
| 103 |
2214-40C |
data delay devices |
Data Delay Devices Inc |
| 104 |
2729GN-400 |
GaN Transistors |
Microsemi |
| 105 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 106 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 107 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 108 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 109 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 110 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 111 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
| 112 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
| 113 |
2N4398 |
-40 V, -30 A, 200 W, PNP silicon power transistor |
Texas Instruments |
| 114 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 115 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 116 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 117 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 118 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 119 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 120 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
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