| No. |
Part Name |
Description |
Manufacturer |
| 91 |
IRG4RC10UTRPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package |
International Rectifier |
| 92 |
IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package |
International Rectifier |
| 93 |
KSB1150 |
-60 V, -3 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
| 94 |
KSB794 |
-60 V, +/-1.5 A, PNP epitaxial silicon darlington transistor |
Samsung Electronic |
| 95 |
MBR1030CT |
10 Am p Schott ky Barrier Rectifier 30-60 Volts |
Micro Commercial Components |
| 96 |
MBR1040CT |
10 Am p Schott ky Barrier Rectifier 30-60 Volts |
Micro Commercial Components |
| 97 |
MBR1045CT |
10 Am p Schott ky Barrier Rectifier 30-60 Volts |
Micro Commercial Components |
| 98 |
MBR1050CT |
10 Am p Schott ky Barrier Rectifier 30-60 Volts |
Micro Commercial Components |
| 99 |
MBR1060CT |
10 Am p Schott ky Barrier Rectifier 30-60 Volts |
Micro Commercial Components |
| 100 |
MJE170 |
-60 V, -3 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 101 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 102 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 103 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 104 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 105 |
MRF6522_60_D |
MRF6522-60 RF Power Transistor |
Motorola |
| 106 |
NSS60200L |
Low VCE(sat) Transistor, PNP, -60 V, 4.0 A |
ON Semiconductor |
| 107 |
NTF2955 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 108 |
NTF2955T1 |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 109 |
NTF2955T1G |
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223 |
ON Semiconductor |
| 110 |
NTP2955 |
Power MOSFET -60 V, -12 A, Single P-Channel, TO-220AB |
ON Semiconductor |
| 111 |
NTTFS5116PL |
Power MOSFET, -60 V, -20 A, 52 mΩ |
ON Semiconductor |
| 112 |
NVD5117PL |
Power MOSFET, -60 V, -61 A, 16 mΩ, Single P-Channel |
ON Semiconductor |
| 113 |
NVTFS5116PL |
Power MOSFET, -60 V, -14 A, 52 mΩ, Single P-Channel |
ON Semiconductor |
| 114 |
PB-IRG4PC40UD |
Leaded 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package |
International Rectifier |
| 115 |
PB-IRG4PC50UD |
Leaded 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package |
International Rectifier |
| 116 |
PB-IRG4RC10U |
Leaded 600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package |
International Rectifier |
| 117 |
PB-IRG4RC10UD |
Leaded 600V UltraFast 8-60 kHz Copack IGBT in a D-Pak package |
International Rectifier |
| 118 |
PDU53-200 |
Delay 200 +/-60 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 119 |
PDU53-200C3 |
Delay 200 +/-60 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 120 |
PDU53-200M |
Delay 200 +/-60 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
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