| No. |
Part Name |
Description |
Manufacturer |
| 91 |
4E40A |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 92 |
4E40M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 93 |
4E40M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 94 |
4E50-28 |
Silicon four-layer diode |
ITT Industries |
| 95 |
4E50-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 96 |
4E50-8 |
Silicon four-layer diode |
ITT Industries |
| 97 |
4E50-8 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 98 |
4E50A |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 99 |
4E50M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 100 |
4E50M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 101 |
4E80-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 102 |
4E80-8 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 103 |
4E80A |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 104 |
4E80M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 105 |
4E80M-8 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 106 |
4J100-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 107 |
4J100-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 108 |
4J200-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 109 |
4J200-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 110 |
4J50-25 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 111 |
4J50-5 |
4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes |
ITT Semiconductors |
| 112 |
BXY22G |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 113 |
BXY22H |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 114 |
BXY22J |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 115 |
BXY23 |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 116 |
M4L3052 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 117 |
M4L3053 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 118 |
M4L3054 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 119 |
M4L3055 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| 120 |
M4L3056 |
PNPN 4-layer diode, two-terminal, fast switching |
Motorola |
| | | |
