| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N5839 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
| 92 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
| 93 |
2N5840 |
HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS |
Motorola |
| 94 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
| 95 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
| 96 |
2N6043 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
| 97 |
2N6044 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
| 98 |
2N6045 |
8A N-P-N darlington power transistor. |
General Electric Solid State |
| 99 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
| 100 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
| 101 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
| 102 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
| 103 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
| 104 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
| 105 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
| 106 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
| 107 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 108 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 109 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 110 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 111 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 112 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 113 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
| 114 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
| 115 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
| 116 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 117 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 118 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
| 119 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
| 120 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
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