| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2CZ4006 |
Discrete Devices-Diode-Standard Rectifier |
Taiwan Semiconductor |
| 92 |
2N5164 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 93 |
2N5164R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 94 |
2N5165 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 95 |
2N5165R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 96 |
2N5166 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 97 |
2N5166R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 98 |
2N5167 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 99 |
2N5167R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 100 |
2N5168 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 101 |
2N5168R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 102 |
2N5169 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 103 |
2N5169R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 104 |
2N5170 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 105 |
2N5170R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 106 |
2N5171 |
Pressfit and pressfit-stud thyristors |
Motorola |
| 107 |
2N5171R |
Pressfit and pressfit-stud thyristors |
Motorola |
| 108 |
2N5441 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 109 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 110 |
2N5443 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 111 |
2N5444 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 200 V. |
Motorola |
| 112 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
| 113 |
2N5446 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 600 V. |
Motorola |
| 114 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 115 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 116 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 117 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 118 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 119 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 120 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
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