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Datasheets for . 3

Datasheets found :: 896
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No. Part Name Description Manufacturer
91 28LV256TC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
92 28LV256TI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
93 28LV256TI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
94 28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
95 28LV256TI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
96 28LV256TM-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
97 28LV256TM-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
98 28LV256TM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
99 28LV256TM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
100 2N2218 0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
101 2N2219 0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. Continental Device India Limited
102 2N2221 0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. Continental Device India Limited
103 2N2222 0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. Continental Device India Limited
104 2N2646 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
105 2N2647 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
106 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
107 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
108 2N3705 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE Continental Device India Limited
109 2N3707 0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE Continental Device India Limited
110 2N3724 1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. Continental Device India Limited
111 2N3859 Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. General Electric Solid State
112 2N3860 Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. General Electric Solid State
113 2N4123 Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. General Electric Solid State
114 2N4870 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
115 2N4871 Silicon unijunction transistor. 30V, 50mA. General Electric Solid State
116 2N4987 Planar monolithic silicon unilateral switch. 30V, 1A. General Electric Solid State
117 2N4988 Planar monolithic silicon unilateral switch. 30V, 1A. General Electric Solid State
118 2N4989 Planar monolithic silicon unilateral switch. 30V, 1A. General Electric Solid State
119 2N4990 Planar monolithic silicon unilateral switch. 30V, 1A. General Electric Solid State
120 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited


Datasheets found :: 896
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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