No. |
Part Name |
Description |
Manufacturer |
91 |
ADR423BR |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
92 |
ADR423BR-REEL |
18V; ultraprecision low-noise, 2.048V / 2.500V / 3.00V / 5.00V XFET voltage reference. For bettery-powered instrumentation, portable medical instruments, precision data acquisition systems, high resolution converters |
Analog Devices |
93 |
ADR423BR-REEL7 |
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
94 |
ADR423BR-REEL7 |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
95 |
ADR425AR |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
96 |
ADR425AR-REEL |
18V; ultraprecision low-noise, 2.048V / 2.500V / 3.00V / 5.00V XFET voltage reference. For bettery-powered instrumentation, portable medical instruments, precision data acquisition systems, high resolution converters |
Analog Devices |
97 |
ADR425AR-REEL7 |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
98 |
ADR425AR-REEL7 |
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
99 |
ADR425ARM-REEL7 |
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
100 |
ADR425ARM-REEL7 |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
101 |
ADR425BR |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
102 |
ADR425BR-REEL |
18V; ultraprecision low-noise, 2.048V / 2.500V / 3.00V / 5.00V XFET voltage reference. For bettery-powered instrumentation, portable medical instruments, precision data acquisition systems, high resolution converters |
Analog Devices |
103 |
ADR425BR-REEL7 |
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
104 |
ADR425BR-REEL7 |
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References |
Analog Devices |
105 |
APT10050B2LC |
POWER MOS VI 1000V 21A 0.500 Ohm |
Advanced Power Technology |
106 |
APT10050B2VFR |
POWER MOS V 1000V 21A 0.500 Ohm |
Advanced Power Technology |
107 |
APT10050B2VR |
POWER MOS V 1000V 21A 0.500 Ohm |
Advanced Power Technology |
108 |
APT10050JLC |
POWER MOS VI 1000V 19A 0.500 Ohm |
Advanced Power Technology |
109 |
APT10050JVFR |
POWER MOS V 1000V 19A 0.500 Ohm |
Advanced Power Technology |
110 |
APT10050JVR |
POWER MOS V 1000V 19A 0.500 Ohm |
Advanced Power Technology |
111 |
APT10050LLC |
POWER MOS VI 1000V 21A 0.500 Ohm |
Advanced Power Technology |
112 |
APT10050LVFR |
POWER MOS V 1000V 21A 0.500 Ohm |
Advanced Power Technology |
113 |
APT10050LVR |
POWER MOS V 1000V 21A 0.500 Ohm |
Advanced Power Technology |
114 |
APT1201R5BVR |
POWER MOS V 1200V 10A 1.500 Ohm |
Advanced Power Technology |
115 |
AQV414 |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Through hole terminal, tube packing style. |
Matsushita Electric Works(Nais) |
116 |
AQV414A |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
117 |
AQV414AX |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin |
Matsushita Electric Works(Nais) |
118 |
AQV414AZ |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin |
Matsushita Electric Works(Nais) |
119 |
BC300 |
0.850W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 240 hFE. |
Continental Device India Limited |
120 |
BC300-4 |
0.850W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 80 hFE. |
Continental Device India Limited |
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