No. |
Part Name |
Description |
Manufacturer |
91 |
256MBDDRSDRAM |
DDRSDRAMSpecificationVersion0.3 |
Samsung Electronic |
92 |
266 |
T-1 3/4 subminiature, miniature grooved lamp. 2.5 volts, 0.35 amps. |
Gilway Technical Lamp |
93 |
268 |
T-1 3/4 subminiature, miniature flanged lamp. 2.5 volts, 0.35 amps. |
Gilway Technical Lamp |
94 |
274.700 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 7/10. Nominal resistance cold 0.324 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
95 |
2N1302 |
Trans GP BJT NPN 0.3A |
New Jersey Semiconductor |
96 |
2N1303 |
Trans GP BJT PNP 0.3A |
New Jersey Semiconductor |
97 |
2N1304 |
Trans GP BJT NPN 0.3A |
New Jersey Semiconductor |
98 |
2N1305 |
Trans GP BJT PNP 0.3A |
New Jersey Semiconductor |
99 |
2N1305A |
Trans GP BJT PNP 0.3A |
New Jersey Semiconductor |
100 |
2N1306 |
Trans GP BJT NPN 0.3A |
New Jersey Semiconductor |
101 |
2N1307 |
Trans GP BJT PNP 0.3A |
New Jersey Semiconductor |
102 |
2N1307A |
Trans GP BJT PNP 0.3A |
New Jersey Semiconductor |
103 |
2N1308 |
Trans GP BJT NPN 0.3A |
New Jersey Semiconductor |
104 |
2N1309 |
Trans GP BJT PNP 0.3A |
New Jersey Semiconductor |
105 |
2N2484 |
0.360W General Purpose NPN Metal Can Transistor. 60V Vceo, 0.050A Ic, 250 hFE. |
Continental Device India Limited |
106 |
2N3007 |
Trans GP BJT 100V 0.35A 3-Pin TO-18 |
New Jersey Semiconductor |
107 |
2N3008 |
Trans GP BJT 200V 0.35A 3-Pin TO-18 |
New Jersey Semiconductor |
108 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
109 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
110 |
2N3251 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 80 hFE. |
Continental Device India Limited |
111 |
2N3251A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 90 hFE. |
Continental Device India Limited |
112 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
113 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
114 |
2N3500 |
Trans GP BJT NPN 150V 0.3A 3-Pin TO-39 |
New Jersey Semiconductor |
115 |
2N3500L |
Trans GP BJT NPN 150V 0.3A 3-Pin TO-5 |
New Jersey Semiconductor |
116 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
117 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
118 |
2N5365 |
Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
119 |
2N5366 |
Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
120 |
2N5367 |
Trans GP BJT PNP 40V 0.3A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
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