| No. |
Part Name |
Description |
Manufacturer |
| 91 |
LT6201IS8#PBF |
Dual 165MHz, Rail-to-Rail Input and Output, 0.95nV/√Hz Low Noise, Op Amp Family |
Linear Technology |
| 92 |
LT6201IS8#TR |
Dual 165MHz, Rail-to-Rail Input and Output, 0.95nV/√Hz Low Noise, Op Amp Family |
Linear Technology |
| 93 |
LT6201IS8#TRPBF |
Dual 165MHz, Rail-to-Rail Input and Output, 0.95nV/√Hz Low Noise, Op Amp Family |
Linear Technology |
| 94 |
NDF08N60Z |
Power MOSFET 600V 0.95 Ohm Single N-Channel |
ON Semiconductor |
| 95 |
NX8560SJ409-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. FC-UPC connector. |
NEC |
| 96 |
NX8560SJ409-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-UPC connector. |
NEC |
| 97 |
NX8567SA409-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1540.953nm. Frequency 194.55 THz. FC-UPC connector. |
NEC |
| 98 |
NX8567SA409-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-UPC connector. |
NEC |
| 99 |
NX8567SAM409-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. FC-UPC connector. |
NEC |
| 100 |
NX8567SAM409-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-UPC connector. |
NEC |
| 101 |
NX8567SAS409-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. FC-UPC connector. |
NEC |
| 102 |
NX8567SAS409-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-UPC connector. |
NEC |
| 103 |
NX8570SC409-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. FC-PC connector. |
NEC |
| 104 |
NX8570SC409-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (20 mW min). ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-PC connector. |
NEC |
| 105 |
NX8571SC409-BA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. FC-PC connector. |
NEC |
| 106 |
NX8571SC409-CA |
CW InGaAsP MQW-DFB laser diode module with wavelength monitor for DWDM applications (10 mW min). ITU-T wavelength 1540.953 nm. Frequency 194.55 THz. SC-PC connector. |
NEC |
| 107 |
RFL2N05 |
2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 108 |
RFL2N06 |
2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 109 |
RFL2N06 |
2A 50V AND 60V 0.95 OHM N-CHANNEL POWER MOSFETS |
New Jersey Semiconductor |
| 110 |
RFL2N06L |
2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET |
Intersil |
| 111 |
STB6N62K3 |
N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 112 |
STD4NB25 |
N - CHANNEL 250V - 0.95Ohm - 4A - DPAK/IPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 113 |
STD4NB25 |
N-CHANNEL 250V - 0.95 OHM - 4A - DPAK POWERMESH MOSFET |
ST Microelectronics |
| 114 |
STD4NB25T4 |
N-CHANNEL 250V - 0.95 OHM - 4A - DPAK POWERMESH MOSFET |
ST Microelectronics |
| 115 |
STD6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in DPAK |
ST Microelectronics |
| 116 |
STD7N52DK3 |
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package |
ST Microelectronics |
| 117 |
STD7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 118 |
STD7NM80 |
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 119 |
STD7NM80-1 |
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 120 |
STF6N62K3 |
N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP package |
ST Microelectronics |
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