No. |
Part Name |
Description |
Manufacturer |
91 |
EEEFK1C100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) FK-V (High temp. reflow) |
Panasonic |
92 |
EEEFK1E100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) FK-V (High temp. reflow) |
Panasonic |
93 |
EEEFK1V100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) FK-V (High temp. reflow) |
Panasonic |
94 |
EEEFP1C100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) FP-V (High temp. reflow) |
Panasonic |
95 |
EEEFP1E100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) FP-V (High temp. reflow) |
Panasonic |
96 |
EEEFT1H100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) FT-V (High temp. reflow) |
Panasonic |
97 |
EEEHA1C100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HA-V (High temp. reflow) |
Panasonic |
98 |
EEEHA1E100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HA-V (High temp. reflow) |
Panasonic |
99 |
EEEHA1V100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HA-V (High temp. reflow) |
Panasonic |
100 |
EEEHB1C100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HB-V (High temp. reflow) |
Panasonic |
101 |
EEEHB1E100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HB-V (High temp. reflow) |
Panasonic |
102 |
EEEHB1V100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HB-V (High temp. reflow) |
Panasonic |
103 |
EEEHD1C100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HD-V (High temp. reflow) |
Panasonic |
104 |
EEEHD1E100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HD-V (High temp. reflow) |
Panasonic |
105 |
EEEHD1V100AR |
Aluminum Electrolytic Capacitors (Surface Mount Type) HD-V (High temp. reflow) |
Panasonic |
106 |
HM514400AR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
107 |
HM514400AR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
108 |
HM514400AR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
109 |
HM514400ARR-6 |
1,048,576-word x 4-bid DRAM, 60ns |
Hitachi Semiconductor |
110 |
HM514400ARR-7 |
1,048,576-word x 4-bid DRAM, 70ns |
Hitachi Semiconductor |
111 |
HM514400ARR-8 |
1,048,576-word x 4-bid DRAM, 80ns |
Hitachi Semiconductor |
112 |
HM514800ARR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
113 |
HM514800ARR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
114 |
HM51S4800ARR-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
115 |
HM51S4800ARR-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
116 |
HY514400AR |
1M x 4-bit CMOS DRAM |
etc |
117 |
IP7800AR SERIES |
1 AMP, 3-Terminal positive regulator |
Seagate Microelectronics |
118 |
IP7900AR SERIES |
1.5 AMP, 3-terminal negative regulator |
Seagate Microelectronics |
119 |
IS-2100ARH |
High Frequency Half Bridge Driver, Rad-Hard, without UVLO |
Intersil |
120 |
LC361000ARLL-10 |
1 MEG (131072 words X 8 bits) SRAM |
SANYO |
| | | |