No. |
Part Name |
Description |
Manufacturer |
91 |
G903CS-DC48 |
Relay. Coil voltage 48 VDC. Contact arrangement 1C. Cover: sealed. Insulation class B. |
Global Components & Controls |
92 |
G903CS-DC48-2 |
Relay. Coil voltage 48 VDC. Contact arrangement 1C. Cover: sealed. Insulation class F. |
Global Components & Controls |
93 |
G903CS-DC5 |
Relay. Coil voltage 5 VDC. Contact arrangement 1C. Cover: sealed. Insulation class B. |
Global Components & Controls |
94 |
G903CS-DC5-2 |
Relay. Coil voltage 5 VDC. Contact arrangement 1C. Cover: sealed. Insulation class F. |
Global Components & Controls |
95 |
G903CS-DC6 |
Relay. Coil voltage 6 VDC. Contact arrangement 1C. Cover: sealed. Insulation class B. |
Global Components & Controls |
96 |
G903CS-DC6-2 |
Relay. Coil voltage 6 VDC. Contact arrangement 1C. Cover: sealed. Insulation class F. |
Global Components & Controls |
97 |
G903CS-DC9 |
Relay. Coil voltage 9 VDC. Contact arrangement 1C. Cover: sealed. Insulation class B. |
Global Components & Controls |
98 |
G903CS-DC9-2 |
Relay. Coil voltage 9 VDC. Contact arrangement 1C. Cover: sealed. Insulation class F. |
Global Components & Controls |
99 |
GSP9108-03CS14 |
CPU frequency generator |
Integrated Circuit Systems |
100 |
GSP9108-03CS8 |
CPU frequency generator |
Integrated Circuit Systems |
101 |
HER1603CS |
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16.0 Amperes) |
Rectron Semiconductor |
102 |
ICS9107C-03CS14 |
CPU frequency generator |
Integrated Circuit Systems |
103 |
ICS9108-03CS14 |
CPU frequency generator |
Integrated Circuit Systems |
104 |
ICS9108-03CS8 |
CPU frequency generator |
Integrated Circuit Systems |
105 |
ICS9172-03CS16 |
Low skew output buffer |
Integrated Circuit Systems |
106 |
IS9108-03CS14 |
CPU Frequency Generator |
Integrated Circuit Systems |
107 |
KM44C4003CS-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
108 |
KM44C4003CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
109 |
KM44C4003CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
110 |
KM44C4003CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
111 |
KM44C4103CS-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
112 |
KM44C4103CS-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
113 |
KM44C4103CSL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
114 |
KM44C4103CSL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
115 |
KMM372C803CS |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V |
Samsung Electronic |
116 |
KSC3503CS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
117 |
LT1203CS8 |
150MHz Video Multiplexers |
Linear Technology |
118 |
LT1203CS8#PBF |
150MHz Video Multiplexers |
Linear Technology |
119 |
LT1203CS8#TR |
150MHz Video Multiplexers |
Linear Technology |
120 |
LT1203CS8#TRPBF |
150MHz Video Multiplexers |
Linear Technology |
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