No. |
Part Name |
Description |
Manufacturer |
91 |
BU2506DF |
Silicon NPN Power Transistors TO-3PFa package |
Savantic |
92 |
BU2506DX |
Silicon Diffused Power Transistor |
Philips |
93 |
BU2506DX |
Silicon NPN Power Transistors TO-3PML package |
Savantic |
94 |
BU406D |
NPN POWER TRANSISTOR |
Boca Semiconductor Corporation |
95 |
BU406D |
Leaded Power Transistor General Purpose |
Central Semiconductor |
96 |
BU406D |
POWER TRANSISTORS(7A,150-200V,60W) |
MOSPEC Semiconductor |
97 |
BU406D |
Silicon NPN Power Transistors TO-220C package |
Savantic |
98 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
99 |
BU406D |
High voltage transistor for switching applications |
SGS-ATES |
100 |
BU406D |
NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's and CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ic = 7Adc, PD = 60W. |
USHA India LTD |
101 |
BU406D |
NPN EPITAXIAL SILICON TRANSISTOR(HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE) |
Wing Shing Computer Components |
102 |
BU4506DF |
Silicon Diffused Power Transistor |
Philips |
103 |
BU4506DX |
Silicon Diffused Power Transistor |
Philips |
104 |
BU4506DZ |
Silicon Diffused Power Transistor |
Philips |
105 |
BU506D |
Silicon diffused power transistors |
Philips |
106 |
BU506D |
Silicon NPN Power Transistors TO-220C package |
Savantic |
107 |
BU506DF |
Silicon diffused power transistors |
Philips |
108 |
BU506DF |
Silicon NPN Power Transistors TO-220Fa package |
Savantic |
109 |
BU606D |
Silicon high voltage, high power NPN transistor for TV applications - metal case |
IPRS Baneasa |
110 |
BU606D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
111 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
112 |
BU606D |
High voltage transistor for switching applications |
SGS-ATES |
113 |
BUP306D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
114 |
BUR606D |
Silicon high power general purpose darlington NPN transistor - metal case |
IPRS Baneasa |
115 |
BUR606D |
Silicon NPN Planar Epitaxial Transistor |
IPRS Baneasa |
116 |
BUZ906D |
P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V. |
Magnatec |
117 |
BUZ906DP |
P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS |
Magnatec |
118 |
C106D |
Leaded Thyristor SCR |
Central Semiconductor |
119 |
C106D |
4A sensitive-gate silicon controlled rectifier. Vrrm 400V. |
General Electric Solid State |
120 |
C106D |
Silicon controlled rectifier reverse blocking triode thyristor |
Motorola |
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