| No. |
Part Name |
Description |
Manufacturer |
| 91 |
AS29F200B-70SC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 92 |
AS29F200B-70SI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 93 |
AS29F200B-70TC |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 94 |
AS29F200B-70TI |
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns |
Alliance Semiconductor |
| 95 |
AS29LV400B-70SC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time |
Alliance Semiconductor |
| 96 |
AS29LV400B-70SI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time |
Alliance Semiconductor |
| 97 |
AS29LV400B-70TC |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time |
Alliance Semiconductor |
| 98 |
AS29LV400B-70TI |
3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time |
Alliance Semiconductor |
| 99 |
AS29LV800B-70RSC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 100 |
AS29LV800B-70RSI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 101 |
AS29LV800B-70RTC |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 102 |
AS29LV800B-70RTI |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 70ns access time |
Alliance Semiconductor |
| 103 |
ATF22V10B-7JC |
High- Performance EE PLD |
Atmel |
| 104 |
ATF22V10B-7PC |
High- Performance EE PLD |
Atmel |
| 105 |
ATF22V10B-7SC |
High- Performance EE PLD |
Atmel |
| 106 |
ATF22V10B-7XC |
High- Performance EE PLD |
Atmel |
| 107 |
ATV750B-7JC |
High-Speed UV-Erasable Programmable Logic Device |
Atmel |
| 108 |
ATV750B-7PC |
High-Speed UV-Erasable Programmable Logic Device |
Atmel |
| 109 |
DDZ10B-7 |
Zener Diodes |
Diodes |
| 110 |
EFA060B-70 |
Low Distortion GaAs Power FET |
Excelics Semiconductor |
| 111 |
EN29F800B-70T |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
| 112 |
EN29F800B-70TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 70ns. Bottom sector. |
Eon Silicon Solution |
| 113 |
EPA060B-70 |
High Efficiency Heterojunction Power FET |
Excelics Semiconductor |
| 114 |
GAL18V10B-7LJ |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 115 |
GAL18V10B-7LP |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 116 |
GAL20RA10B-7LJ |
High-Speed Asynchronous E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 117 |
GAL22V10B-7LJ |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 118 |
GAL22V10B-7LP |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 119 |
GAL22V10B-7LPI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 120 |
GM-180B-70 |
Geode Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| | | |
