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Datasheets for 0CL

Datasheets found :: 423
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 GM71CS17400CL-5 null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Hynix Semiconductor
92 GM71CS17400CL-6 null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Hynix Semiconductor
93 GM71CS17400CL-7 null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM Hynix Semiconductor
94 GM71CS17400CLJ-5 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power Hynix Semiconductor
95 GM71CS17400CLJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power Hynix Semiconductor
96 GM71CS17400CLJ-7 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power Hynix Semiconductor
97 GM71CS17400CLT-5 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power Hynix Semiconductor
98 GM71CS17400CLT-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power Hynix Semiconductor
99 GM71CS17400CLT-7 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power Hynix Semiconductor
100 GM71CS17800CLJ-5 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power Hynix Semiconductor
101 GM71CS17800CLJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power Hynix Semiconductor
102 GM71CS17800CLJ-7 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power Hynix Semiconductor
103 GM71CS17800CLT-5 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power Hynix Semiconductor
104 GM71CS17800CLT-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power Hynix Semiconductor
105 GM71CS17800CLT-7 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power Hynix Semiconductor
106 HI-15530CLI Manchester Encoder / Decoder Holt Integrated Circuits
107 HI-15530CLM Manchester Encoder / Decoder Holt Integrated Circuits
108 HI-15530CLT Manchester Encoder / Decoder Holt Integrated Circuits
109 HM514260CLJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
110 HM514260CLJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
111 HM514260CLJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
112 HM514260CLJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
113 HM514260CLTT-6 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
114 HM514260CLTT-6R 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
115 HM514260CLTT-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
116 HM514260CLTT-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
117 HM514400CL 1/048/576-word X 4-bit Dynamic Random Access Memory Hitachi Semiconductor
118 HM514400CLS-6 1,048,576-word x 4-bit dynamic random access memory, 60ns Hitachi Semiconductor
119 HM514400CLS-7 1,048,576-word x 4-bit dynamic random access memory, 70ns Hitachi Semiconductor
120 HM514400CLS-8 1,048,576-word x 4-bit dynamic random access memory, 80ns Hitachi Semiconductor


Datasheets found :: 423
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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