No. |
Part Name |
Description |
Manufacturer |
91 |
GM71CS17400CL-5 |
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
92 |
GM71CS17400CL-6 |
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
93 |
GM71CS17400CL-7 |
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
94 |
GM71CS17400CLJ-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power |
Hynix Semiconductor |
95 |
GM71CS17400CLJ-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
96 |
GM71CS17400CLJ-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power |
Hynix Semiconductor |
97 |
GM71CS17400CLT-5 |
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power |
Hynix Semiconductor |
98 |
GM71CS17400CLT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
99 |
GM71CS17400CLT-7 |
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power |
Hynix Semiconductor |
100 |
GM71CS17800CLJ-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
101 |
GM71CS17800CLJ-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
102 |
GM71CS17800CLJ-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
103 |
GM71CS17800CLT-5 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
Hynix Semiconductor |
104 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
105 |
GM71CS17800CLT-7 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns, low power |
Hynix Semiconductor |
106 |
HI-15530CLI |
Manchester Encoder / Decoder |
Holt Integrated Circuits |
107 |
HI-15530CLM |
Manchester Encoder / Decoder |
Holt Integrated Circuits |
108 |
HI-15530CLT |
Manchester Encoder / Decoder |
Holt Integrated Circuits |
109 |
HM514260CLJ-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
110 |
HM514260CLJ-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
111 |
HM514260CLJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
112 |
HM514260CLJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
113 |
HM514260CLTT-6 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
114 |
HM514260CLTT-6R |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
115 |
HM514260CLTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
116 |
HM514260CLTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
117 |
HM514400CL |
1/048/576-word X 4-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
118 |
HM514400CLS-6 |
1,048,576-word x 4-bit dynamic random access memory, 60ns |
Hitachi Semiconductor |
119 |
HM514400CLS-7 |
1,048,576-word x 4-bit dynamic random access memory, 70ns |
Hitachi Semiconductor |
120 |
HM514400CLS-8 |
1,048,576-word x 4-bit dynamic random access memory, 80ns |
Hitachi Semiconductor |
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