No. |
Part Name |
Description |
Manufacturer |
91 |
HYB39S256160DT-7 |
SDRAM Components - 256Mb (16Mx16) PC133 2-2-2 |
Infineon |
92 |
HYB39S256160DT-75 |
256-MBit Synchronous DRAM |
Infineon |
93 |
HYB39S256160DT-75 |
256 MBit Synchronous DRAM |
Infineon |
94 |
HYB39S256160DT-8 |
256 MBit Synchronous DRAM |
Infineon |
95 |
HYB39S256160DT-8 |
256-MBit Synchronous DRAM |
Infineon |
96 |
HYB39S256400DT-6 |
256 MBit Synchronous DRAM |
Infineon |
97 |
HYB39S256400DT-6 |
256-MBit Synchronous DRAM |
Infineon |
98 |
HYB39S256400DT-7 |
SDRAM Components - 256Mb (64Mx4) PC133 2-2-2 |
Infineon |
99 |
HYB39S256400DT-75 |
256 MBit Synchronous DRAM |
Infineon |
100 |
HYB39S256400DT-75 |
256-MBit Synchronous DRAM |
Infineon |
101 |
HYB39S256400DT-8 |
256 MBit Synchronous DRAM |
Infineon |
102 |
HYB39S256400DT-8 |
256-MBit Synchronous DRAM |
Infineon |
103 |
HYB39S256800DT-6 |
256 MBit Synchronous DRAM |
Infineon |
104 |
HYB39S256800DT-6 |
256-MBit Synchronous DRAM |
Infineon |
105 |
HYB39S256800DT-7 |
SDRAM Components - 256Mb (32Mx8) PC133 2-2-2 |
Infineon |
106 |
HYB39S256800DT-75 |
256-MBit Synchronous DRAM |
Infineon |
107 |
HYB39S256800DT-75 |
256 MBit Synchronous DRAM |
Infineon |
108 |
HYB39S256800DT-8 |
256 MBit Synchronous DRAM |
Infineon |
109 |
HYB39S256800DT-8 |
256-MBit Synchronous DRAM |
Infineon |
110 |
KM416S1120DT-G/F10 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
111 |
KM416S1120DT-G/F7 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
112 |
KM416S1120DT-G/F8 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
113 |
KM416S1120DT-G/FC |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
114 |
KM41C4000DT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
115 |
KM41C4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
116 |
KM41C4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
117 |
KM41V4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
118 |
KM41V4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
119 |
KM44C1000DT-5 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
120 |
KM44C1000DT-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
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