No. |
Part Name |
Description |
Manufacturer |
91 |
KM684000LR-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
92 |
KM684000LR-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
93 |
KM684000LR-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
94 |
KM684000LR-L |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
95 |
KM684000LRI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
96 |
KM684000LRI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
97 |
KM684000LRI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
98 |
KM684000LRI-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
99 |
KM684000LRI-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
100 |
KM684000LRI-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
101 |
L-110LRC-TR |
3.2 x 1.6 x 1.0 mm SMD LED, super red |
PARA Light |
102 |
L-150LRW-TR |
3.2 x 1.6 x 1.1 mm SMD LED, super red |
PARA Light |
103 |
L-180LRC-TR |
1.8 mm AXIAL LED, super red |
PARA Light |
104 |
L-180LRC-TR7 |
1.8 mm AXIAL LED, super red |
PARA Light |
105 |
L-180LRC-TR9 |
1.8 mm AXIAL LED, super red |
PARA Light |
106 |
L-190LRW-TR |
1.6 x 0.8 x 0.8 mm SMD LED, super red |
PARA Light |
107 |
MAX6360LRUK-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
108 |
MAX6360LRUT-T |
Dual/Triple-Voltage ��P Supervisory Circuits |
MAXIM - Dallas Semiconductor |
109 |
MR2520LRL |
Overvoltage Transient Suppressor 24 - 32V |
ON Semiconductor |
110 |
MRF19030LR3 |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
111 |
MRF21010LR1 |
2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET |
Freescale (Motorola) |
112 |
MRF21010LR1 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Motorola |
113 |
MRF21030 |
MRF21030R3, MRF21030LR3, MRF21030SR3, MRF21030LSR3 2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
114 |
MRF21030LR3 |
2.2 GHz, 30 W, 28 V Lateral N-Channel RF Power MOSFET |
Freescale (Motorola) |
115 |
MRF5S19090L |
MRF5S19090L, MRF5S19090LR3, MRF5S19090LSR3 1990 MHz, 18 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
116 |
MRF5S19090LR3 |
1990 MHz, 18 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
117 |
MRF5S19100L |
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
118 |
MRF5S19100LR3 |
1990 MHz, 22 W Avg., 2 x N–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
119 |
MRF5S21090L |
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs |
Motorola |
120 |
MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
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