| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) |
BKC International Electronics |
| 92 |
1N2069 |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 93 |
1N2069A |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 94 |
1N2070 |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 95 |
1N2070A |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 96 |
1N2071 |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 97 |
1N2071A |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 98 |
1N3282 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 700V |
Motorola |
| 99 |
1N3283 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1050V |
Motorola |
| 100 |
1N3284 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1400V |
Motorola |
| 101 |
1N3285 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1750V |
Motorola |
| 102 |
1N3286 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 2100V |
Motorola |
| 103 |
1N4099-1 |
SILICON 500mA LOW NOISE ZENER DIODES |
Microsemi |
| 104 |
1N4148 |
10mA, 100V ultra fast recovery rectifier |
MCC |
| 105 |
1N4148 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 106 |
1N4148-G |
Small Signal Switching Diodes, VRRM=100V, VR=100V, PD=0mW, IF=150mA |
Comchip Technology |
| 107 |
1N4148W |
300mA, 75V ultra fast recovery rectifier |
MCC |
| 108 |
1N4148WX |
300mA, 75V ultra fast recovery rectifier |
MCC |
| 109 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
| 110 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
| 111 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
| 112 |
1N5370B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 56V, Izt =20mA |
Panjit International Inc |
| 113 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
| 114 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 115 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
| 116 |
1N748 |
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). |
Fairchild Semiconductor |
| 117 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
| 118 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
| 119 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 120 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
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