| No. |
Part Name |
Description |
Manufacturer |
| 91 |
M27C256B-60N7X |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 92 |
M27C256B-70N7TR |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 93 |
M27C256B-70N7X |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 94 |
M27C256B-80N7TR |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 95 |
M27C256B-80N7X |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 96 |
M27C256B-90N7TR |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 97 |
M27C256B-90N7X |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 98 |
NDD60N745U1 |
N-Channel Power MOSFET |
ON Semiconductor |
| 99 |
SM5610N7 |
IC for quartz crystal oscillating module |
Nippon Precision Circuits Inc |
| 100 |
SM5610N7S |
IC for quartz crystal oscillating module |
Nippon Precision Circuits Inc |
| 101 |
SSH10N70 |
N-Channel Power MOSFETs |
Samsung Electronic |
| 102 |
SSM10N70 |
N-Channel Power MOSFET |
Samsung Electronic |
| 103 |
STB160N75F3 |
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 104 |
STH210N75F6-2 |
N-channel 75 V, 0.0027 Ohm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 105 |
STH240N75F3-2 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 106 |
STH240N75F3-6 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 107 |
STL40N75LF3 |
N-channel 75 V, 16 mOhm typ., 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 108 |
STL80N75F6 |
N-channel 75 V, 4.5 mOhm typ., 18 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
| 109 |
STP160N75F3 |
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 110 |
STP210N75F6 |
N-channel 75 V, 3 mOhm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 111 |
STP80N70F4 |
N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package |
ST Microelectronics |
| 112 |
STP80N70F6 |
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 113 |
STV240N75F3 |
N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 package |
ST Microelectronics |
| 114 |
STW160N75F3 |
N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-247 package |
ST Microelectronics |
| 115 |
T10N7 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 116 |
T10N7 |
10 AMPS THYRISTOR 700V |
IPRS Baneasa |
| 117 |
T30N7 |
Mains frequency thyristor 30A |
IPRS Baneasa |
| 118 |
UPD65370N7-XXX-F6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 119 |
UPD65370N7-XXX-H6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
| 120 |
UPD65470N7-XXX-F6 |
Embedded array EA-9HD(0.35um) 4-layer product |
NEC |
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