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Datasheets for 0R6

Datasheets found :: 223
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 ERJUP8D80R6V Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type Panasonic
92 ERJUP8F80R6V Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type Panasonic
93 ERJXGNF80R6U General Purpose Precision Thick Chip Resistors Panasonic
94 ERJXGNF80R6Y General Purpose Precision Thick Chip Resistors Panasonic
95 M30W0R6500T0 96 Mbit (64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories) 1.8V Supply, Multi-Chip Package ST Microelectronics
96 M30W0R6500T0ZAQT 96 Mbit (64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories) 1.8V Supply, Multi-Chip Package ST Microelectronics
97 M36D0R6040T0 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
98 M36D0R6040T0ZAIT 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
99 M36W0R6030B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package ST Microelectronics
100 M36W0R6030B0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package ST Microelectronics
101 M36W0R6030B0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package ST Microelectronics
102 M36W0R6030T0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package ST Microelectronics
103 M36W0R6030T0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package ST Microelectronics
104 M36W0R6030T0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package ST Microelectronics
105 M36W0R6040B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
106 M36W0R6040B0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
107 M36W0R6040B0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
108 M36W0R6040T0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
109 M36W0R6040T0ZAQ 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
110 M36W0R6040T0ZAQF 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
111 M36W0R6040T0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
112 M36W0R6050B 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
113 M36W0R6050B0ZAQT 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package ST Microelectronics
114 MRF21120R6 2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET Freescale (Motorola)
115 MRF21180R6 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET Freescale (Motorola)
116 MRF21180R6 RF Power Field Effect Transistor Motorola
117 MRF5P20180 MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET Motorola
118 MRF5P20180R6 RF POWER FIELD EFFECT TRANSISTOR Motorola
119 MRF5P21180R6 2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET Freescale (Motorola)
120 MRF5P21180R6 RF Power Field Effect Transistor Motorola


Datasheets found :: 223
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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