No. |
Part Name |
Description |
Manufacturer |
91 |
ERJUP8D80R6V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
92 |
ERJUP8F80R6V |
Anti-Sulfurated Thick Film Chip Resistors/ Anti-Surge Type |
Panasonic |
93 |
ERJXGNF80R6U |
General Purpose Precision Thick Chip Resistors |
Panasonic |
94 |
ERJXGNF80R6Y |
General Purpose Precision Thick Chip Resistors |
Panasonic |
95 |
M30W0R6500T0 |
96 Mbit (64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories) 1.8V Supply, Multi-Chip Package |
ST Microelectronics |
96 |
M30W0R6500T0ZAQT |
96 Mbit (64 + 32Mb, x16, Multiple Bank, Burst, Flash Memories) 1.8V Supply, Multi-Chip Package |
ST Microelectronics |
97 |
M36D0R6040T0 |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
98 |
M36D0R6040T0ZAIT |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
99 |
M36W0R6030B0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
100 |
M36W0R6030B0ZAQ |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
101 |
M36W0R6030B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
102 |
M36W0R6030T0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
103 |
M36W0R6030T0ZAQ |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
104 |
M36W0R6030T0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
105 |
M36W0R6040B0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
106 |
M36W0R6040B0ZAQ |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
107 |
M36W0R6040B0ZAQF |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
108 |
M36W0R6040T0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
109 |
M36W0R6040T0ZAQ |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
110 |
M36W0R6040T0ZAQF |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
111 |
M36W0R6040T0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
112 |
M36W0R6050B |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
113 |
M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
ST Microelectronics |
114 |
MRF21120R6 |
2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET |
Freescale (Motorola) |
115 |
MRF21180R6 |
2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET |
Freescale (Motorola) |
116 |
MRF21180R6 |
RF Power Field Effect Transistor |
Motorola |
117 |
MRF5P20180 |
MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET |
Motorola |
118 |
MRF5P20180R6 |
RF POWER FIELD EFFECT TRANSISTOR |
Motorola |
119 |
MRF5P21180R6 |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET |
Freescale (Motorola) |
120 |
MRF5P21180R6 |
RF Power Field Effect Transistor |
Motorola |
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