| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MSP430F5309IRGZR |
MSP430F530x Mixed Signal Microcontroller 48-VQFN -40 to 85 |
Texas Instruments |
| 92 |
MSP430F5309IRGZT |
MSP430F530x Mixed Signal Microcontroller 48-VQFN -40 to 85 |
Texas Instruments |
| 93 |
MSP430F5309IZQE |
MSP430F530x Mixed Signal Microcontroller 80-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
| 94 |
MSP430F5309IZQER |
MSP430F530x Mixed Signal Microcontroller 80-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
| 95 |
MSP430F5310 |
MSP430F530x Mixed Signal Microcontroller 48-VQFN -40 to 85 |
Texas Instruments |
| 96 |
MSP430F5310IPT |
MSP430F530x Mixed Signal Microcontroller 48-LQFP -40 to 85 |
Texas Instruments |
| 97 |
MSP430F5310IPTR |
MSP430F530x Mixed Signal Microcontroller 48-LQFP -40 to 85 |
Texas Instruments |
| 98 |
MSP430F5310IRGCR |
MSP430F530x Mixed Signal Microcontroller 64-VQFN -40 to 85 |
Texas Instruments |
| 99 |
MSP430F5310IRGCT |
MSP430F530x Mixed Signal Microcontroller 64-VQFN -40 to 85 |
Texas Instruments |
| 100 |
MSP430F5310IRGZR |
MSP430F530x Mixed Signal Microcontroller 48-VQFN -40 to 85 |
Texas Instruments |
| 101 |
MSP430F5310IRGZT |
MSP430F530x Mixed Signal Microcontroller 48-VQFN -40 to 85 |
Texas Instruments |
| 102 |
MSP430F5310IZQE |
MSP430F530x Mixed Signal Microcontroller 80-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
| 103 |
MSP430F5310IZQER |
MSP430F530x Mixed Signal Microcontroller 80-BGA MICROSTAR JUNIOR -40 to 85 |
Texas Instruments |
| 104 |
R1170X SERIES |
800mA LDO Regulator |
Ricoh |
| 105 |
S3C2400X |
PDA/Smart PDA/Web Phone B.O.M. of S3C2400X v2.2 B/D |
Samsung Electronic |
| 106 |
S3C44B0X |
PDA/GPS/LCD Game/E Book S3C44A0X Errata |
Samsung Electronic |
| 107 |
SC0801A |
CHARACTER LCD MODULE display format: 8x1; module size: 60x36x10.0; viewing size: 48.0x 13.0; character size: 4.45x8.35; dot size: 0.85x1.0; |
SUNLIKE |
| 108 |
SE-17010 |
SE board for UPD1700X series |
NEC |
| 109 |
TC7652 |
The TC7652 is a lower noise version of the TC7650, sacrificing some input specifications (bias current and bandwidth)to achieve a 10x reduction in noise.All the other benefits of the chopper technique are present,i.e.freedom from offset ad |
Microchip |
| 110 |
TID29A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 111 |
TID30A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 112 |
TMP88CH40IMG |
TLCS-870X for Automotive |
TOSHIBA |
| 113 |
X-NUCLEO-IKP01A |
VL6180X explorer shield, compatible with STM32 nucleo |
ST Microelectronics |
| 114 |
XC4002XL |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
| 115 |
XC4005XL |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
| 116 |
XC4010XL |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
| 117 |
XC4013E-1BG240C |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
| 118 |
XC4013E-1BG240I |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
| 119 |
XC4013E-1BG240M |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
| 120 |
XC4013E-1CB240C |
XC4000E and XC4000X Series Field Programmable Gate Arrays |
Xilinx |
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