| No. |
Part Name |
Description |
Manufacturer |
| 91 |
AM28F010-150JIB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 92 |
AM28F010-150PC |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 93 |
AM28F010-150PCB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 94 |
AM28F010-150PE |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 95 |
AM28F010-150PEB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 96 |
AM28F010-150PI |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 97 |
AM28F010-150PIB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
| 98 |
AMS2910-15 |
1A LOW DROPOUT VOLTAGE REGULATOR |
Advanced Monolithic Systems |
| 99 |
AN28F010-150 |
1024(128K x 8) CMOS flash memory. Access speed 150 ns |
Intel |
| 100 |
AP28F010-150 |
1024(128K x 8) CMOS flash memory. Access speed 150 ns |
Intel |
| 101 |
AS29F010-150LC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 102 |
AS29F010-150PC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 103 |
AS29F010-150TC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
| 104 |
ASM1810-15 |
150 ms, Low power, 5 V mP reset, active LOW, push-pull output |
Alliance Semiconductor |
| 105 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 106 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 107 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 108 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 109 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 110 |
AT27BV010-15JC |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
| 111 |
AT27BV010-15JI |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
| 112 |
AT27BV010-15TC |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
| 113 |
AT27BV010-15TI |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
| 114 |
AT27C010-15JC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
| 115 |
AT27C010-15JI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
| 116 |
AT27C010-15PC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
| 117 |
AT27C010-15PI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
| 118 |
AT27C010-15TC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
| 119 |
AT27C010-15TI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
| 120 |
AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
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