No. |
Part Name |
Description |
Manufacturer |
91 |
AM28F010-150JIB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
92 |
AM28F010-150PC |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
93 |
AM28F010-150PCB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
94 |
AM28F010-150PE |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
95 |
AM28F010-150PEB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
96 |
AM28F010-150PI |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
97 |
AM28F010-150PIB |
1 megabit CMOS 12.0 volt, bulk erase flash memory |
Advanced Micro Devices |
98 |
AMS2910-15 |
1A LOW DROPOUT VOLTAGE REGULATOR |
Advanced Monolithic Systems |
99 |
AN28F010-150 |
1024(128K x 8) CMOS flash memory. Access speed 150 ns |
Intel |
100 |
AP28F010-150 |
1024(128K x 8) CMOS flash memory. Access speed 150 ns |
Intel |
101 |
AS29F010-150LC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
102 |
AS29F010-150PC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
103 |
AS29F010-150TC |
5V 128K x 8 CMOS flash EEPROM, access time 150ns |
Alliance Semiconductor |
104 |
ASM1810-15 |
150 ms, Low power, 5 V mP reset, active LOW, push-pull output |
Alliance Semiconductor |
105 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
106 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
107 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
108 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
109 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
110 |
AT27BV010-15JC |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
111 |
AT27BV010-15JI |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
112 |
AT27BV010-15TC |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
113 |
AT27BV010-15TI |
1 Megabit 128K x 8 Unregulated Battery-Voltage OTP CMOS EPROM |
Atmel |
114 |
AT27C010-15JC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
115 |
AT27C010-15JI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
116 |
AT27C010-15PC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
117 |
AT27C010-15PI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
118 |
AT27C010-15TC |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
119 |
AT27C010-15TI |
1 Megabit 128K x 8 OTP CMOS EPROM |
Atmel |
120 |
AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM |
Atmel |
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