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Datasheets for 1012

Datasheets found :: 717
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No. Part Name Description Manufacturer
91 ADJ11012 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 12 V DC. 1 form C. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
92 ADJ21012 DJ-relay. 16A, compact and high-insulation power latching relay. Coil voltage 12 V DC. 1 form A. 1 coil latching type. Flux-resistant type. Without test button. Matsushita Electric Works(Nais)
93 ADSP-1012 12x12-Bit CMOS Multiplier Analog Devices
94 ADSP-1012JX2 ADSP-1012JX² 12x12-Bit CMOS Multiplier Analog Devices
95 ADSP-1012JX2 ADSP-1012JX² 12x12-Bit CMOS Multiplier Analog Devices
96 ADSP-1012KX 12x12-Bit CMOS Multiplier Analog Devices
97 ADSP-1012SX 12x12-Bit CMOS Multiplier Analog Devices
98 ADSP-1012TX 12x12-Bit CMOS Multiplier Analog Devices
99 AGN21012 ULTRA-SMALL PACKAGE SLIM POLARIZED RELAY Matsushita Electric Works(Nais)
100 AGQ21012 GQ-relay. Ultra-small package flat polarized relay. Operating function 1 coil latching . Standard PC board terminal. Coil rating 12 V DC. Matsushita Electric Works(Nais)
101 AN1012 PREDICTING THE BATTERY LIFE AND DATA RETENTION PERIOD OF NVRAMS SGS Thomson Microelectronics
102 APE1012 very low cost voice and melody synthesizer with 4-bits CPU Aplus Integrated Circuits
103 APE10124 PE-relay. The slim power relay. 1 form A. Coil voltage 24 V DC. Silver alloy with Au-plated. Single contact. Matsushita Electric Works(Nais)
104 ARX1012 RX-relay. Small micro wave relay. 1 form C. Single side stable type. Nominal voltage 12 V DC. Matsushita Electric Works(Nais)
105 ASX21012 SX-relay. High sensitivity relay with guaranteed low level switching capacity. 2 form C. Standard PC board terminal. 1 coil latching. Coil rating 12 V DC. Matsushita Electric Works(Nais)
106 BF1012 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
107 BF1012S Silicon N-Channel MOSFET Tetrode Infineon
108 BF1012S Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
109 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
110 BGM1012 MMIC wideband amplifier NXP Semiconductors
111 BGM1012 MMIC wideband amplifier Philips
112 BGM1012 BGM1012; MMIC wideband amplifier Philips
113 BGM1012 BGM1012; MMIC wideband amplifier Philips
114 BS616LV1012 Asynchronous 1M(64Kx16) bits Static RAM Brilliance Semiconductor
115 BS616LV1012AC Very Low Power/Voltage CMOS SRAM Brilliance Semiconductor
116 BS616LV1012AC-55 Very Low Power/Voltage CMOS SRAM Brilliance Semiconductor
117 BS616LV1012AC-70 Very Low Power/Voltage CMOS SRAM Brilliance Semiconductor
118 BS616LV1012ACG55 Very Low Power/Voltage CMOS SRAM Brilliance Semiconductor
119 BS616LV1012ACG70 Very Low Power/Voltage CMOS SRAM Brilliance Semiconductor
120 BS616LV1012ACP55 Very Low Power/Voltage CMOS SRAM Brilliance Semiconductor


Datasheets found :: 717
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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