Datasheets for 121

Datasheets found :: 10614

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No.	Part Name	Description	Manufacturer
91	1210UFE	1000 V single phase bridge 3.0 A forward current, 70 ns recovery time	Voltage Multipliers
92	1210WXXX	High Voltage MLC Chip	AVX Corporation
93	1210X104XXX	CERAMIC MULTILAYER CAPACITORS	NOVACAP
94	1210XXX	High Voltage MLC Chip	AVX Corporation
95	12136AF	Dolby B-Type Noise Reduction System	Hitachi Semiconductor
96	1214-110M	Pulsed Power L-Band (Si)	Microsemi
97	1214-110V	Pulsed Power L-Band (Si)	Microsemi
98	1214-150L	Pulsed Power L-Band (Si)	Microsemi
99	1214-220M	Pulsed Power L-Band (Si)	Microsemi
100	1214-30	30 W, 28 V, 1200-1400 MHz common base transistor	GHz Technology
101	1214-30	Pulsed Power L-Band (Si)	Microsemi
102	1214-300	300 W, 50 V, 1200-1400 MHz common base transistor	GHz Technology
103	1214-300	Pulsed Power L-Band (Si)	Microsemi
104	1214-300M	Pulsed Power L-Band (Si)	Microsemi
105	1214-300V	Pulsed Power L-Band (Si)	Microsemi
106	1214-32L	Pulsed Power L-Band (Si)	Microsemi
107	1214-370M	Pulsed Power L-Band (Si)	Microsemi
108	1214-370V	Pulsed Power L-Band (Si)	Microsemi
109	1214-55	55 W, 28 V, 1200-1400 MHz common base transistor	GHz Technology
110	1214-55	Pulsed Power L-Band (Si)	Microsemi
111	1214-550P	Pulsed Power L-Band (Si)	Microsemi
112	1214-700P	Pulsed Power L-Band (Si)	Microsemi
113	1214-700P1	Pulsed Power L-Band (Si)	Microsemi
114	1214-800P	Pulsed Power L-Band (Si)	Microsemi
115	1214GN-120E	GaN Transistors	Microsemi
116	1214GN-120EL	GaN Transistors	Microsemi
117	1214GN-120EP	GaN Transistors	Microsemi
118	1214GN-180LV	GaN Transistors	Microsemi
119	1214GN-20V	GaN Transistors	Microsemi
120	1214GN-280	GaN Transistors	Microsemi

Datasheets found :: 10614

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