No. |
Part Name |
Description |
Manufacturer |
91 |
HA16117 |
CMOS Watchdog Timer |
Hitachi Semiconductor |
92 |
HA16117F |
CMOS Watchdog Timer |
Hitachi Semiconductor |
93 |
HA16117F SERIES |
CMOS Watchdog Timer |
Hitachi Semiconductor |
94 |
HA16117FA |
CMOS Watchdog Timer |
Hitachi Semiconductor |
95 |
HA16117FB |
CMOS Watchdog Timer |
Hitachi Semiconductor |
96 |
HA16117FC |
CMOS Watchdog Timer |
Hitachi Semiconductor |
97 |
HA16117FPA |
Watch dog timer |
Hitachi Semiconductor |
98 |
HA16117FPAJ |
Watch dog timer |
Hitachi Semiconductor |
99 |
HA16117FPAJ |
ASSP>ICs for System Monitor>Watch Dog Timers (ASSP) |
Renesas |
100 |
HA16117FPB |
Watch dog timer |
Hitachi Semiconductor |
101 |
HA16117FPBJ |
Watch dog timer |
Hitachi Semiconductor |
102 |
HA16117FPBJ |
ASSP>ICs for System Monitor>Watch Dog Timers (ASSP) |
Renesas |
103 |
HA16117FPC |
Watch dog timer |
Hitachi Semiconductor |
104 |
HA16117FPCJ |
Watch dog timer |
Hitachi Semiconductor |
105 |
HA16117FPCJ |
ASSP>ICs for System Monitor>Watch Dog Timers (ASSP) |
Renesas |
106 |
HBCR-1611 |
Single Chip Bar Code Decode IC |
Agilent (Hewlett-Packard) |
107 |
HT1611C |
Timer with Dialer Interface |
Holtek Semiconductor |
108 |
IDT821611 |
Long Haul SLIC with Polarity Reversal |
IDT |
109 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
110 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
111 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
112 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
113 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
114 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
115 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
116 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
117 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
118 |
K4E171611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
119 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
120 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
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