| No. |
Part Name |
Description |
Manufacturer |
| 91 |
269-D-180-F1480-A |
1480 nm pump laser module. D - isolated, PMF. Operating power 180 mW. A = no connector. |
Agere Systems |
| 92 |
269-D-180-F1480-B |
1480 nm pump laser module. D - isolated, PMF. Operating power 180 mW. B = SC/APC connector. |
Agere Systems |
| 93 |
269-D-180-F1480-C |
1480 nm pump laser module. D - isolated, PMF. Operating power 180 mW. C = FC/APC connector. |
Agere Systems |
| 94 |
269-D-180-M-14XX-A |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 180 mW. Isolated, PMF. No connector. |
Agere Systems |
| 95 |
269-D-180-M-14XX-B |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 180 mW. Isolated, PMF. Connector SC/APC. |
Agere Systems |
| 96 |
269-D-180-M-14XX-C |
DFB, multimode pump laser module. Stable wavelength perfoprmance within the 1420 nm to 1510 nm (wavelength 14xx). Operating power 180 mW. Isolated, PMF. Connector FC/APC. |
Agere Systems |
| 97 |
2EZ180 |
180 V, 2 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 98 |
2EZ180 |
180 V, 0.5 A, 2 W, glass passivated junction silicon zener diode |
TRSYS |
| 99 |
2N3055 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
Motorola |
| 100 |
2N3055A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS |
Motorola |
| 101 |
2N3415 |
0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE |
Continental Device India Limited |
| 102 |
2N6796 |
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 103 |
2N6796 |
8A/ 100V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
| 104 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 105 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 106 |
3EZ180 |
180 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 107 |
3EZ180D |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 108 |
3EZ180D1 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 109 |
3EZ180D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance. |
Motorola |
| 110 |
3EZ180D10 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 111 |
3EZ180D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 10% tolerance. |
Motorola |
| 112 |
3EZ180D2 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 113 |
3EZ180D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance. |
Motorola |
| 114 |
3EZ180D3 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 115 |
3EZ180D4 |
3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 116 |
3EZ180D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. |
Motorola |
| 117 |
AD9106 |
Quad, Low Power, 12-Bit, 180 MSPS, Digital-to-Analog Converter and Waveform Generator |
Analog Devices |
| 118 |
AD9851 |
180 MHz Complete DDS synthesizer |
Analog Devices |
| 119 |
AD9851/CGPCB |
180 MHz Complete DDS synthesizer |
Analog Devices |
| 120 |
AD9851/FSPCB |
180 MHz Complete DDS synthesizer |
Analog Devices |
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