No. |
Part Name |
Description |
Manufacturer |
91 |
1S2123A |
Silicon planar zener diode 18V |
TOSHIBA |
92 |
1S213 |
Temperature compensation reference diode |
TOSHIBA |
93 |
1S213 |
Temperature-compensated Zener diode |
TOSHIBA |
94 |
1S2130 |
Silicon voltage reference diode 400mW 13V |
Texas Instruments |
95 |
1S2130A |
Silicon voltage reference diode 400mW 13V, ±5% tolerance |
Texas Instruments |
96 |
1S214 |
Temperature compensation reference diode |
TOSHIBA |
97 |
1S214 |
Temperature-compensated Zener diode |
TOSHIBA |
98 |
1S215 |
Temperature compensation reference diode |
TOSHIBA |
99 |
1S215 |
Temperature-compensated Zener diode |
TOSHIBA |
100 |
1S2150 |
Silicon voltage reference diode 400mW 15V |
Texas Instruments |
101 |
1S2150A |
Silicon voltage reference diode 400mW 15V, ±5% tolerance |
Texas Instruments |
102 |
1S216 |
Temperature compensation reference diode |
TOSHIBA |
103 |
1S216 |
Temperature-compensated Zener diode |
TOSHIBA |
104 |
1S217 |
Temperature-compensated Zener diode |
TOSHIBA |
105 |
1S218 |
General-purpose switching diode |
TOSHIBA |
106 |
1S2180 |
Silicon voltage reference diode 400mW 18V |
Texas Instruments |
107 |
1S2180A |
Silicon voltage reference diode 400mW 18V, ±5% tolerance |
Texas Instruments |
108 |
1S2186 |
Silicon epitaxial planar type diode. |
Panasonic |
109 |
1S2186 |
DETECTOR, SWITCHING DIODE |
TOSHIBA |
110 |
1S2186 |
SILICON EPITAXIAL PLANAR TYPE |
TOSHIBA |
111 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
112 |
1S220 |
1 Watt reference diode |
TOSHIBA |
113 |
1S220 |
Zener diode |
TOSHIBA |
114 |
1S220 |
Silicon junction zener diode 1W 4.5V |
TOSHIBA |
115 |
1S2200 |
Silicon voltage reference diode 400mW 20V |
Texas Instruments |
116 |
1S2200A |
Silicon voltage reference diode 400mW 20V, ±5% tolerance |
Texas Instruments |
117 |
1S2207(B) |
Varactor diode |
NEC |
118 |
1S2208(B) |
Silicon Varactor diode |
NEC |
119 |
1S2209(B) |
Silicon Varactor diode |
NEC |
120 |
1S221 |
1 Watt reference diode |
TOSHIBA |
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