No. |
Part Name |
Description |
Manufacturer |
91 |
ISPLSI5256VE-80LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
92 |
ISPLSI5256VE-80LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
93 |
ISPLSI5256VE-80LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
94 |
ISPLSI5256VE-80LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
95 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
96 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
97 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
98 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
99 |
L29C520JC22 |
4 x 8-bit multilevel pipeline register. Speed 22 ns |
LOGIC Devices Incorporated |
100 |
L29C520PC22 |
4 x 8-bit multilevel pipeline register. Speed 22 ns |
LOGIC Devices Incorporated |
101 |
MA44641A |
40 V, 12 ns, snap varactor step recovery diode |
MA-Com |
102 |
MA44641B |
40 V, 12 ns, snap varactor step recovery diode |
MA-Com |
103 |
MA44641C |
40 V, 12 ns, snap varactor step recovery diode |
MA-Com |
104 |
MDU12H-125 |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
105 |
MDU12H-125C3 |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
106 |
MDU12H-125M |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
107 |
MDU12H-125MC3 |
Delay 125 +/-6.2 ns, dual, ECL-interfaced fixed delay line |
Data Delay Devices Inc |
108 |
P3C1256-12JC |
12 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
109 |
P3C1256-12PC |
12 ns, 3.3 V static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
110 |
P4C116-12JC |
12 ns,Static CMOS RAM, 2 K x 8 ultra high speed |
Performance Semiconductor Corporation |
111 |
P4C116-12PC |
12 ns,Static CMOS RAM, 2 K x 8 ultra high speed |
Performance Semiconductor Corporation |
112 |
P4C116-12SC |
12 ns,Static CMOS RAM, 2 K x 8 ultra high speed |
Performance Semiconductor Corporation |
113 |
P4C1256-12JC |
12 ns, static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
114 |
P4C1256-12PC |
12 ns, static CMOS RAM, 32 K x 8 high speed |
Performance Semiconductor Corporation |
115 |
P4C147-12PC |
12 ns,Static CMOS RAM, 4 K x 1 ultra high speed |
Performance Semiconductor Corporation |
116 |
P4C148-12PC |
12 ns,Static CMOS RAM, 1 K x 4 ultra high speed |
Performance Semiconductor Corporation |
117 |
P4C149-12PC |
12 ns,Static CMOS RAM, 1 K x 4 ultra high speed |
Performance Semiconductor Corporation |
118 |
P4C150-12PC |
12 ns,resettable static CMOS RAM, 1 K x 4 ultra high speed |
Performance Semiconductor Corporation |
119 |
P4C150-12SC |
12 ns,resettable static CMOS RAM, 1 K x 4 ultra high speed |
Performance Semiconductor Corporation |
120 |
P4C164-12DM |
12 ns,static CMOS RAM, 8 K x 8 ultra high speed |
Performance Semiconductor Corporation |
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