No. |
Part Name |
Description |
Manufacturer |
91 |
K100F |
10000 V rectifier 1.5-3 A forward current, 200 ns recovery time |
Voltage Multipliers |
92 |
M100FG |
10000 V rectifier 10-100 mA forward current,200 ns recovery time |
Voltage Multipliers |
93 |
M160FG |
16000 V rectifier 10-100 mA forward current,200 ns recovery time |
Voltage Multipliers |
94 |
NMC2116J-20 |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
95 |
NMC2116J-20L |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
96 |
NMC2116N-20 |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
97 |
NMC2116N-20L |
200 ns, 5 V, 1 W, 2048 x 8 static RAM |
National Semiconductor |
98 |
NMC27C010Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
99 |
NMC27C010Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
100 |
NMC27C010QE200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
101 |
NMC27C010QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
102 |
NMC27C1024Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
103 |
NMC27C1024Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
104 |
NMC27C1024QE200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
105 |
NMC27C1024QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
106 |
NMC27C128BN20 |
200 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
107 |
NMC27C128BN200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
108 |
NMC27C128BQ20 |
200 ns, Vcc=5V+/-5%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
109 |
NMC27C128BQ200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
110 |
NMC27C128BQE200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
111 |
NMC27C128BQM200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
112 |
NMC27C256BN20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
113 |
NMC27C256BN200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
114 |
NMC27C256BNE20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
115 |
NMC27C256BNE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version one time programmable CMOS PROM |
National Semiconductor |
116 |
NMC27C256BQ20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
117 |
NMC27C256BQ200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
118 |
NMC27C256BQE200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
119 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
120 |
NMC27C256Q20 |
200 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM |
National Semiconductor |
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