| No. |
Part Name |
Description |
Manufacturer |
| 91 |
M2V12D20TP-75 |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 92 |
M2V12D20TP-75L |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 93 |
M2V28S20TP |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 94 |
M2V28S20TP-6 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 95 |
M2V28S20TP-7 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 96 |
M2V28S20TP-8 |
128M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 97 |
M2V56D20TP-10 |
256M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 98 |
M2V56D20TP-75 |
256M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 99 |
M2V56S20TP |
256M Synchronous DRAM |
Mitsubishi Electric Corporation |
| 100 |
M2V56S20TP-6 |
256M synchronous DRAM |
Mitsubishi Electric Corporation |
| 101 |
M2V56S20TP-7 |
256M synchronous DRAM |
Mitsubishi Electric Corporation |
| 102 |
M2V56S20TP-8 |
256M synchronous DRAM |
Mitsubishi Electric Corporation |
| 103 |
M2V64S20TP |
64M bit Synchronous DRAM |
Mitsubishi Electric Corporation |
| 104 |
MSP430I2020TPW |
16-bit Mixed Signal Microcontroller 28-TSSOP -40 to 105 |
Texas Instruments |
| 105 |
MSP430I2020TPWR |
16-bit Mixed Signal Microcontroller 28-TSSOP -40 to 105 |
Texas Instruments |
| 106 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 107 |
RM20TPM-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 108 |
RM20TPM-24 |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
| 109 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 110 |
RM20TPM-2H |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 111 |
RM20TPM-2H |
Three-Phase Diode Bridge Modules (40 Amperes/1200-1600 Volts) |
Powerex Power Semiconductors |
| 112 |
RM20TPM-H |
Rectifier Diodes, 800V |
Mitsubishi Electric Corporation |
| 113 |
RM20TPM-H |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 114 |
RM20TPM-H |
Three-Phase Diode Bridge Modules (40 Amperes/800 Volts) |
Powerex Power Semiconductors |
| 115 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 116 |
RM20TPM-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 117 |
TLOE20TP |
LED Lamp Panel Circuit Indicator |
TOSHIBA |
| 118 |
TLOE20TP(F) |
LED lamp, φ5 |
TOSHIBA |
| 119 |
TLOH20TP |
Ultra Bright LEDs |
Marktech Optoelectronics |
| 120 |
TLOH20TP |
InGaAlP LED Panel Circuit Indicator |
TOSHIBA |
| | | |
