| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5229CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 92 |
1N5229CUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 93 |
1N5229D |
4.3 V, 20 mA, zener diode |
Leshan Radio Company |
| 94 |
1N5229D |
Diode Zener Single 4.3V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 95 |
1N5229D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 96 |
1N5229D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 97 |
1N5229DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 98 |
1N5229DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 99 |
1N5229UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 4.3 V. |
Microsemi |
| 100 |
1S229 |
1 Watt reference diode |
TOSHIBA |
| 101 |
1S229 |
Zener diode |
TOSHIBA |
| 102 |
1S229 |
Silicon junction zener diode 1W 14V |
TOSHIBA |
| 103 |
1SS229 |
Silicon Switching Diode |
NEC |
| 104 |
1SV229 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 105 |
2722 162 06061 |
ISOLATORS for P.C. Board Mounting, frequency range 2297.5 to 2367.5 MHz |
Philips |
| 106 |
2N1229 |
Silicon PNP Transistor |
Motorola |
| 107 |
2N2229 |
Silicon NPN Transistor |
Motorola |
| 108 |
2N2229 |
Trans GP BJT NPN 40V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 109 |
2N229 |
Germanium NPN Transistor |
Motorola |
| 110 |
2N2290 |
10A PNP ADE Germanium power transistor |
Motorola |
| 111 |
2N2290 |
Germanium PNP Transistor |
Motorola |
| 112 |
2N2291 |
10A PNP ADE Germanium power transistor |
Motorola |
| 113 |
2N2291 |
Germanium PNP Transistor |
Motorola |
| 114 |
2N2292 |
10A PNP ADE Germanium power transistor |
Motorola |
| 115 |
2N2292 |
Germanium PNP Transistor |
Motorola |
| 116 |
2N2293 |
10A PNP ADE Germanium power transistor |
Motorola |
| 117 |
2N2293 |
Germanium PNP Transistor |
Motorola |
| 118 |
2N2294 |
Germanium PNP Transistor |
Motorola |
| 119 |
2N2295 |
Germanium PNP Transistor |
Motorola |
| 120 |
2N2296 |
Germanium PNP Transistor |
Motorola |
| | | |
