No. |
Part Name |
Description |
Manufacturer |
91 |
1N5238C |
Diode Zener Single 8.7V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
92 |
1N5238C-1 |
Zener Voltage Regulator Diode |
Microsemi |
93 |
1N5238C-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
94 |
1N5238CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
95 |
1N5238CUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
96 |
1N5238D |
8.7 V, 20 mA, zener diode |
Leshan Radio Company |
97 |
1N5238D |
Diode Zener Single 8.7V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
98 |
1N5238D-1 |
Zener Voltage Regulator Diode |
Microsemi |
99 |
1N5238D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
100 |
1N5238DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
101 |
1N5238DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
102 |
1N5238UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 8.7 V. |
Microsemi |
103 |
2N1238 |
Silicon PNP Transistor |
Motorola |
104 |
2N2238 |
Germanium PNP Transistor |
Motorola |
105 |
2N238 |
Germanium PNP Transistor |
Motorola |
106 |
2N2380 |
Silicon NPN Transistor |
Motorola |
107 |
2N2380A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
108 |
2N2380A |
Silicon NPN Transistor |
Motorola |
109 |
2N2381 |
PNP germanium epitaxial mesa transistor |
Motorola |
110 |
2N2381 |
Germanium PNP Transistor |
Motorola |
111 |
2N2382 |
PNP germanium epitaxial mesa transistor |
Motorola |
112 |
2N2382 |
Germanium PNP Transistor |
Motorola |
113 |
2N2383 |
Silicon NPN Transistor |
Motorola |
114 |
2N2384 |
Silicon NPN Transistor |
Motorola |
115 |
2N2386 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
116 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
117 |
2N2386A |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
118 |
2N2387 |
Silicon NPN Transistor |
Motorola |
119 |
2N2388 |
Silicon NPN Transistor |
Motorola |
120 |
2N2389 |
Silicon NPN Transistor |
Motorola |
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