No. |
Part Name |
Description |
Manufacturer |
91 |
1N723A |
Zener Diode 24V |
Motorola |
92 |
1N823A |
Leaded Zener Diode Temperature Compensated |
Central Semiconductor |
93 |
1N823A |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
Compensated Devices Incorporated |
94 |
1N823A |
0TC Reference Voltage Zener |
Microsemi |
95 |
1N823A |
0TC Reference Voltage Zener |
Microsemi |
96 |
1N823A |
Temperature-compesated zener reference diode |
Motorola |
97 |
1N823A |
Reference Diode |
Motorola |
98 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
99 |
1N823A |
Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
100 |
1N823A |
Voltage reference diodes |
Philips |
101 |
1N823A |
Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching |
SESCOSEM |
102 |
1N823A |
Silicon Voltage Reference Diode temperature compensated 6.2V |
Transitron Electronic |
103 |
1N823A (DO35) |
0TC Reference Voltage Zener |
Microsemi |
104 |
1N823A-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
105 |
1N823A-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
106 |
1N823AUR |
0TC Reference Voltage Zener |
Microsemi |
107 |
1N823AUR-1 |
0TC Reference Voltage Zener |
Microsemi |
108 |
1N823AUR-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
109 |
1S2123A |
Silicon planar zener diode 18V |
TOSHIBA |
110 |
1SMB5923A |
SILICON ZENER DIODES |
EIC discrete Semiconductors |
111 |
1SMB5923A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 8.2 V. +-10% tolerance. |
Motorola |
112 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
113 |
23A003 |
CW Class A/AB > 1 GHz |
Microsemi |
114 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
115 |
23A005 |
CW Class A/AB > 1 GHz |
Microsemi |
116 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
117 |
23A008 |
CW Class A/AB > 1 GHz |
Microsemi |
118 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
119 |
23A017 |
CW Class A/AB > 1 GHz |
Microsemi |
120 |
23A017 |
Trans GP BJT NPN 50V 0.8A 3-Pin Case 55BT-2 |
New Jersey Semiconductor |
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