| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5253DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 92 |
1N5253UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 25 V. |
Microsemi |
| 93 |
1S253 |
1 Watt reference diode |
TOSHIBA |
| 94 |
1S253 |
Zener diode |
TOSHIBA |
| 95 |
1S253 |
Silicon junction zener diode 1W 82V |
TOSHIBA |
| 96 |
2530 |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 97 |
2530I |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 98 |
2530N |
High Speed 512 x 8 Static Read-only Memory |
Signetics |
| 99 |
2532 |
Quad 80-bit static shift register |
Signetics |
| 100 |
2532B |
Quad 80-bit static shift register |
Signetics |
| 101 |
2533 |
1024-bit static shift register |
Signetics |
| 102 |
2533V |
1024-bit static shift register |
Signetics |
| 103 |
2722 162 02531 |
Circulators/Isolators 1590 to 1800 MHz |
Philips |
| 104 |
2KBP005M/3N253 |
2.0 Ampere Bridge Rectifiers |
Fairchild Semiconductor |
| 105 |
2N1253 |
Silicon NPN Transistor |
Motorola |
| 106 |
2N1253 |
Trans GP BJT NPN 45V 5A 3-Pin TO-61 |
New Jersey Semiconductor |
| 107 |
2N1253A |
Silicon NPN Transistor |
Motorola |
| 108 |
2N2253 |
Silicon NPN Transistor |
Motorola |
| 109 |
2N253 |
Germanium NPN Transistor |
Motorola |
| 110 |
2N2530 |
Silicon NPN Transistor |
Motorola |
| 111 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 112 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 113 |
2N2531 |
Silicon NPN Transistor |
Motorola |
| 114 |
2N2532 |
Silicon NPN Transistor |
Motorola |
| 115 |
2N2533 |
Silicon NPN Transistor |
Motorola |
| 116 |
2N2534 |
Silicon NPN Transistor |
Motorola |
| 117 |
2N2535 |
Germanium PNP Transistor |
Motorola |
| 118 |
2N2535N3 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 119 |
2N2535N5 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 120 |
2N2536 |
Germanium PNP Transistor |
Motorola |
| | | |
