| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N5256BUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 92 |
1N5256B_T26A |
30V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 93 |
1N5256B_T50A |
30V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 94 |
1N5256B_T50R |
30V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 95 |
1N5256C |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 96 |
1N5256C |
Diode Zener Single 30V 2% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 97 |
1N5256C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 98 |
1N5256C-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 99 |
1N5256CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 100 |
1N5256CUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 101 |
1N5256D |
30 V, 4.2 mA, zener diode |
Leshan Radio Company |
| 102 |
1N5256D |
Diode Zener Single 30V 1% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 103 |
1N5256D-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 104 |
1N5256D-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 105 |
1N5256DUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 106 |
1N5256DUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 107 |
1N5256UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 30 V. |
Microsemi |
| 108 |
1S256 |
1 Watt reference diode |
TOSHIBA |
| 109 |
1S256 |
Zener diode |
TOSHIBA |
| 110 |
1S256 |
Silicon junction zener diode 1W 105V |
TOSHIBA |
| 111 |
1SV256 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 112 |
20KP256 |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 113 |
20KP256A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 114 |
20KP256C |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 115 |
20KP256CA |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
| 116 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 117 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 118 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 119 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 120 |
22C10 |
256-BitNonvolatileCMOSStaticRAM |
Catalyst Semiconductor |
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