| No. |
Part Name |
Description |
Manufacturer |
| 91 |
29C021TI-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 92 |
29C021TI-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 93 |
29C021TM-1 |
High speed 150 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 94 |
29C021TM-1 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 150 ns. |
Turbo IC |
| 95 |
29C021TM-2 |
High speed 200 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 96 |
29C021TM-2 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 200 ns. |
Turbo IC |
| 97 |
29C021TM-3 |
High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM |
Turbo IC |
| 98 |
29C021TM-3 |
High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. |
Turbo IC |
| 99 |
29F002 |
2M (256K X 8) BIT |
Fujitsu Microelectronics |
| 100 |
29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY |
Macronix International |
| 101 |
39SF020 |
2 Megabit (256K x 8) Multi-Purpose Flash |
Silicon Storage Technology |
| 102 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
| 103 |
5962R-TBD01QTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 104 |
5962R-TBD01QTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 105 |
5962R-TBD01QTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 106 |
5962R-TBD01VTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 107 |
5962R-TBD01VTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 108 |
5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 109 |
61LV25616AL |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 110 |
79C0832RPQE15 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 111 |
79C0832RPQE20 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 112 |
79C0832RPQH15 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 113 |
79C0832RPQH20 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 114 |
79C0832RPQI15 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 115 |
79C0832RPQI20 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 116 |
79C0832RPQK15 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 117 |
79C0832RPQK20 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 118 |
79C0832RT1QE15 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 119 |
79C0832RT1QE20 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
| 120 |
79C0832RT1QH15 |
8 megabit (256k x 32-bit) EEPROM MCM |
Maxwell Technologies |
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