No. |
Part Name |
Description |
Manufacturer |
91 |
2N2965 |
Germanium PNP Transistor |
Motorola |
92 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
93 |
2N2966 |
Germanium PNP Transistor |
Motorola |
94 |
2N2967 |
Silicon NPN Transistor |
Motorola |
95 |
2N2968 |
Silicon PNP Transistor |
Motorola |
96 |
2N2968 |
SPAT® PNP symmetrical silicon transistor |
Sprague |
97 |
2N2969 |
Silicon PNP Transistor |
Motorola |
98 |
2N2969 |
SPAT® PNP symmetrical silicon transistor |
Sprague |
99 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
100 |
2N3296 |
Silicon NPN Transistor |
Motorola |
101 |
2N4296 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
102 |
2N4296 |
Silicon NPN Transistor |
Motorola |
103 |
2N4296 |
Trans GP BJT NPN 250V 1A |
New Jersey Semiconductor |
104 |
2N4296 |
Silicon NPN Power Transistor, TO-66 (cont d) package, PNP Complement SRSP4296 |
Silicon Transistor Corporation |
105 |
2N4296 |
Silicon NPN Power Transistor, TO-66 (cont d) package, PNP Complement SRSP4296 |
Silicon Transistor Corporation |
106 |
2N5296 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
107 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
108 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
109 |
2N5296 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
110 |
2N5296 |
Silicon NPN Transistor |
Motorola |
111 |
2N5296 |
Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
112 |
2N5296 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
113 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
114 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
115 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
116 |
2N6294 |
Silicon Complementary Darlingtons Power Transistor, TO-66 Package CASE 620, complement 2N6296 |
Silicon Transistor Corporation |
117 |
2N6296 |
COMPLEMENTARY SILICON DARLINGTONl |
Central Semiconductor |
118 |
2N6296 |
Trans Darlington PNP 60V 4A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
119 |
2N6296 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
120 |
2N6296 |
Bipolar PNP Device |
SemeLAB |
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