No. |
Part Name |
Description |
Manufacturer |
91 |
M5M29KB641ATP |
Memory>NOR type Flash Memory |
Renesas |
92 |
M5M29KB641AVP |
Memory>NOR type Flash Memory |
Renesas |
93 |
M5M29KE131BTP |
Memory>NOR type Flash Memory |
Renesas |
94 |
M5M29KE131BVP |
Memory>NOR type Flash Memory |
Renesas |
95 |
M5M29KT331ATP |
Memory>NOR type Flash Memory |
Renesas |
96 |
M5M29KT331AVP |
Memory>NOR type Flash Memory |
Renesas |
97 |
M5M29KT641ATP |
Memory>NOR type Flash Memory |
Renesas |
98 |
M5M29KT641AVP |
Memory>NOR type Flash Memory |
Renesas |
99 |
MAX6455UT29K+T |
µP Supervisors with Separate VCC Reset and Manual Reset Outputs |
MAXIM - Dallas Semiconductor |
100 |
MAX6456UT29K+T |
µP Supervisors with Separate VCC Reset and Manual Reset Outputs |
MAXIM - Dallas Semiconductor |
101 |
MAX6729KALTD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
102 |
MAX6729KALTD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
103 |
MAX6729KALTD3-T |
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
104 |
MAX6729KAMRD3-T |
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
105 |
MAX6729KAMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
106 |
MAX6729KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
107 |
MAX6729KARHD3-T |
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
108 |
MAX6729KARVD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
109 |
MAX6729KARVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
110 |
MAX6729KARYD3-T |
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
111 |
MAX6729KASDD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
112 |
MAX6729KASDD3-T |
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
113 |
MAX6729KASFD3-T |
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
114 |
MAX6729KASHD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
115 |
MAX6729KASHD3-T |
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
116 |
MAX6729KASVD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
117 |
MAX6729KASVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
118 |
MAX6729KASYD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
119 |
MAX6729KASYD3-T |
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
120 |
MAX6729KATED3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
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