No. |
Part Name |
Description |
Manufacturer |
91 |
2N6035-D |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
92 |
2N6036 |
Leaded Power Transistor Darlington |
Central Semiconductor |
93 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
94 |
2N6036 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
95 |
2N6036 |
Darlington 4A complementary power PNP transistors |
Motorola |
96 |
2N6036 |
PNP Power Transistor TO-126 |
National Semiconductor |
97 |
2N6036 |
PNP Power Transistor |
National Semiconductor |
98 |
2N6036 |
PNP silicon power transistor 40W/4A |
National Semiconductor |
99 |
2N6036 |
Trans Darlington PNP 60V 4A 3-Pin TO-126 |
New Jersey Semiconductor |
100 |
2N6036 |
Power 4A 80V PNPD |
ON Semiconductor |
101 |
2N6036 |
Silicon PNP Power Transistors TO-126 package |
Savantic |
102 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
103 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
104 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
105 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
106 |
2N6036 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
107 |
2N6037 |
Leaded Power Transistor Darlington |
Central Semiconductor |
108 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
109 |
2N6037 |
Darlington 4A complementary power NPN transistors |
Motorola |
110 |
2N6037 |
NPN Power Transistor TO-126 |
National Semiconductor |
111 |
2N6037 |
NPN Power Transistor |
National Semiconductor |
112 |
2N6037 |
NPN silicon power transistor 40W/4A |
National Semiconductor |
113 |
2N6037 |
Trans Darlington NPN 40V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
114 |
2N6037 |
Silicon NPN Power Transistors TO-126 package |
Savantic |
115 |
2N6037 |
NPN medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
116 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
117 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
118 |
2N6037 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
119 |
2N6038 |
Leaded Power Transistor Darlington |
Central Semiconductor |
120 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
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