| No. |
Part Name |
Description |
Manufacturer |
| 91 |
5962P9960704QUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 92 |
5962P9960704QUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 93 |
5962P9960704QUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 94 |
5962P9960704QXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 95 |
5962P9960704QXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 96 |
5962P9960704QXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 97 |
5962P9960704TUA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 98 |
5962P9960704TUC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 99 |
5962P9960704TUX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 100 |
5962P9960704TXA |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 101 |
5962P9960704TXC |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 102 |
5962P9960704TXX |
512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) |
Aeroflex Circuit Technology |
| 103 |
AWB7032P9 |
2.30 to 2.40 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 104 |
AWB7122P9 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 105 |
AWB7222P9 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 106 |
AWB7223RM52P9 |
1.93 - 1.995 GHz Infrastructure Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 107 |
AWB7227RM52P9 |
2.11 to 2.17 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 108 |
AWB7232P9 |
2.3 - 2.4 GHz Small-Cell Power Amplifier Module |
Skyworks Solutions |
| 109 |
CW22P901 |
CW20P-Type CW Tunable, Wavelength-Stabilized Laser Module |
Agere Systems |
| 110 |
CW22P911 |
CW20P-Type CW Tunable, Wavelength-Stabilized Laser Module |
Agere Systems |
| 111 |
M2P9 |
MEDIUM CURRENT SILICON RECTIFIERS |
etc |
| 112 |
S3C72P9 |
|
Samsung Electronic |
| 113 |
S3C72P9 |
|
Samsung Electronic |
| 114 |
S3C72P9 |
|
Samsung Electronic |
| 115 |
S3P72P9 |
|
Samsung Electronic |
| 116 |
S3P72P9 |
|
Samsung Electronic |
| 117 |
S3P72P9 |
|
Samsung Electronic |
| 118 |
TK2P90E |
Power MOSFET (N-ch 700V<VDSS) |
TOSHIBA |
| | | |
