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Datasheets for 2S

Datasheets found :: 289
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 K4R761869A 250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks Samsung Electronic
92 K4R761869A-F 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
93 K4R761869A-FBCCN1 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
94 K4R761869A-FCM8 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
95 K4R761869A-FCT9 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
96 K4R761869A-GCM8 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
97 K4R761869A-GCN1 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
98 K4R761869A-GCT9 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM Samsung Electronic
99 KM416RD8AC-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
100 KM416RD8AC-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
101 KM416RD8AC-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
102 KM416RD8AD-RG60 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
103 KM416RD8AD-RK70 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
104 KM416RD8AD-RK80 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
105 KM416RD8AS-RM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
106 KM416RD8AS-SM80 256K x 16 x 32s dependent banks for consumer package. Access time: 40 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
107 KM418RD8AC-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
108 KM418RD8AC-RK70 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
109 KM418RD8AC-RK80 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
110 KM418RD8AD-RG60 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). Samsung Electronic
111 KM418RD8AD-RK70 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). Samsung Electronic
112 KM418RD8AD-RK80 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). Samsung Electronic
113 KTA1267-GR TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
114 KTA1267-O TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
115 KTA1267-Y TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
116 KTC3199-BL TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
117 KTC3199-GR TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
118 KTC3199-O TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
119 KTC3199-Y TO-92S Plastic-Encapsulate Biploar Transistors Micro Commercial Components
120 LM48310SD/NOPB Ultra-Low EMI, Filterless, 2.6W, Mono, Class D Audio Power Amplifier with E2S 10-WSON -40 to 85 Texas Instruments


Datasheets found :: 289
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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