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Datasheets for 300

Datasheets found :: 3706
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No. Part Name Description Manufacturer
91 28LV256SM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
92 28LV256TC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
93 28LV256TC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
94 28LV256TI-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
95 28LV256TI-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
96 28LV256TM-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
97 28LV256TM-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
98 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
99 2N3702 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE Continental Device India Limited
100 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
101 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
102 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
103 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
104 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
105 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
106 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
107 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
108 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
109 2N6072 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
110 2N6072A Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
111 2N6072B Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Motorola
112 2N6564 300 V, silicon controlled rectifier Boca Semiconductor Corporation
113 2N6676 NPN silicon power transistor. 15 A, 300 V, 175 W. Motorola
114 2N7002 60 V, 300 mA N-channel Trench MOSFET Nexperia
115 2N7002 60 V, 300 mA N-channel Trench MOSFET NXP Semiconductors
116 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Nexperia
117 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET NXP Semiconductors
118 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
119 2SB1035 900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 Isahaya Electronics Corporation
120 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation


Datasheets found :: 3706
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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