| No. |
Part Name |
Description |
Manufacturer |
| 91 |
JANTX1N6336US |
Zener Voltage Regulator Diode |
Microsemi |
| 92 |
JANTX1N6636US |
Zener Voltage Regulator Diode |
Microsemi |
| 93 |
JANTX2N3636UB |
PNP Transistor |
Microsemi |
| 94 |
JANTX2N7236U |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-1 package |
International Rectifier |
| 95 |
JANTX2N7236U |
P-Channel |
Microsemi |
| 96 |
JANTXV1N6136US |
Transient Voltage Suppressor |
Microsemi |
| 97 |
JANTXV1N6336US |
Zener Voltage Regulator Diode |
Microsemi |
| 98 |
JANTXV1N6636US |
Zener Voltage Regulator Diode |
Microsemi |
| 99 |
JANTXV2N3636UB |
PNP Transistor |
Microsemi |
| 100 |
JANTXV2N7236U |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-1 package |
International Rectifier |
| 101 |
JANTXV2N7236U |
P-Channel |
Microsemi |
| 102 |
KF836U |
Cellular Phone |
Korea Electronics (KEC) |
| 103 |
KM7101 |
Ultra-Low Cost, 136uA, 4.9MHz Rail-to-Rail I/O Amplifier |
Fairchild Semiconductor |
| 104 |
KRA736U |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 105 |
KRC836U |
Built in Bias Resistor |
Korea Electronics (KEC) |
| 106 |
LMX2336U |
PLLatinum Ultra Low Power Dual Frequency Synthesizer for RF Personal Communications 2.0 GHz/1.2 GHz |
National Semiconductor |
| 107 |
LMX2336UEVAL |
2.0 GHz /1.2 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 108 |
LMX2336USLBX |
2.0 GHz /1.2 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 109 |
LMX2336USLEX |
2.0 GHz /1.2 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 110 |
LMX2336UTM |
2.0 GHz /1.2 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 111 |
LMX2336UTMX |
2.0 GHz /1.2 GHz PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 112 |
M5M5T5636UG-20 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
Mitsubishi Electric Corporation |
| 113 |
M5M5T5636UG-20 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
Mitsubishi Electric Corporation |
| 114 |
M5M5T5636UG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
Mitsubishi Electric Corporation |
| 115 |
M5M5T5636UG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
Mitsubishi Electric Corporation |
| 116 |
M5M5T5636UG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
Mitsubishi Electric Corporation |
| 117 |
M5M5T5636UG-25 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
Mitsubishi Electric Corporation |
| 118 |
M5M5V5636UG-16 |
Memory>Fast SRAM>Network SRAM |
Renesas |
| 119 |
M5M5V5636UG-20 |
Memory>Fast SRAM>Network SRAM |
Renesas |
| 120 |
MAX6336US16D1-T |
Ultra-low-voltage, low-power microprocessor circuit with manual reset (reset output active-low, push/pull . Reset threshold(typ) 1.6V, reset timeout(min) 1ms. |
MAXIM - Dallas Semiconductor |
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