No. |
Part Name |
Description |
Manufacturer |
91 |
1N3894 |
Signal Diode |
Motorola |
92 |
1N3895 |
Signal Diode |
Motorola |
93 |
1N3896 |
Zener Diode 0.77V |
Motorola |
94 |
1N3897 |
Zener Diode 1.5V |
Motorola |
95 |
1N3898 |
Zener Diode 2.1V |
Motorola |
96 |
1N3899 |
Ultra Fast Rectifier (less than 100ns) |
Microsemi |
97 |
1N3899 |
Fast recovery silicon rectifier diode |
Motorola |
98 |
1N3899 |
Rectifier Diode 6A |
Motorola |
99 |
1N3899 |
20A Fast-Recovery Silicon Rectifier 50V |
RCA Solid State |
100 |
1N3899 |
Silicon rectifier diode - fast recovery series |
SESCOSEM |
101 |
1N3899 |
50 V, 20 A fast recovery rectifier |
Solid State Devices Inc |
102 |
1N3899 |
Fast Recovery Rectifier |
Transitron Electronic |
103 |
1N3899R |
Fast Rectifier (100-500ns) |
Microsemi |
104 |
1N3899R |
20A Fast-Recovery Silicon Rectifier 50V, reverse polarity |
RCA Solid State |
105 |
1N4389 |
Signal Diode |
Motorola |
106 |
1N5389 |
Rectifier Diode 40000V 0.1A |
Motorola |
107 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
108 |
1N6389 |
Transient Voltage Suppressor |
Microsemi |
109 |
1N6389 |
Diode TVS Single Bi-Dir 45V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
110 |
1SS389 |
SWITCHING DIODES |
Micro Commercial Components |
111 |
1SS389 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
112 |
2722 162 03891 |
Circulators/Isolators 1880 to 2120 MHz |
Philips |
113 |
2N1389 |
Silicon NPN Transistor |
Motorola |
114 |
2N2389 |
Silicon NPN Transistor |
Motorola |
115 |
2N3389 |
Silicon NPN Transistor |
Motorola |
116 |
2N3716 |
Silicon NPN Power Transistor, TO-3 package, PNP Complement 2N3892 |
Silicon Transistor Corporation |
117 |
2N3884-2N3895 |
Phase Control SCR 175 Amoeres Average 1200 Volts |
Powerex Power Semiconductors |
118 |
2N389 |
Germanium NPN Transistor |
Motorola |
119 |
2N389 |
Trans GP BJT NPN 30V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
120 |
2N3890 |
THYRISTOR |
Motorola |
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