No. |
Part Name |
Description |
Manufacturer |
91 |
D100D |
4 NAND gates with 2 inputs each, possibly equivalent SN7400N |
RFT |
92 |
D103D |
4 NAND gates with 2 inputs each, collector open, possibly equivalent SN7403N |
RFT |
93 |
D126D |
4 NAND gates with 2 inputs each, collector open, 15V output reverse voltage, possibly equivalent SN7426N |
RFT |
94 |
D200D |
4 NAND gates with 2 inputs each, TTL fast series, possibly equivalent SN74H00N |
RFT |
95 |
D201D |
4 NAND gates with 2 inputs each, collector open, TTL fast series, possibly equivalent SN74H01N |
RFT |
96 |
DDU8C-5075 |
Total delay 75 +/-4 ns, 5-TAP, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
97 |
DDU8C-5075A1 |
Total delay 75 +/-4 ns, 5-TAP, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
98 |
DDU8C-5075B1 |
Total delay 75 +/-4 ns, 5-TAP, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
99 |
DDU8C-5075M |
Total delay 75 +/-4 ns, 5-TAP, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
100 |
DDU8C-5075MD1 |
Total delay 75 +/-4 ns, 5-TAP, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
101 |
DDU8C-5075MD4 |
Total delay 75 +/-4 ns, 5-TAP, HCMOS-interfaced fixed delay line |
Data Delay Devices Inc |
102 |
DDU8F-5075B1 |
Total delay 75 +/-4 ns, 5-TAP, TTL-interfaced fixed delay line |
Data Delay Devices Inc |
103 |
DDU8F-5075M |
Total delay 75 +/-4 ns, 5-TAP, TTL-interfaced fixed delay line |
Data Delay Devices Inc |
104 |
DDU8F-5075MD1 |
Total delay 75 +/-4 ns, 5-TAP, TTL-interfaced fixed delay line |
Data Delay Devices Inc |
105 |
DDU8F-5075MD4 |
Total delay 75 +/-4 ns, 5-TAP, TTL-interfaced fixed delay line |
Data Delay Devices Inc |
106 |
DL000D |
4 NAND gates with 2 inputs each (TTL low-power Schottky series), possibly equivalent SN74LS00N |
RFT |
107 |
DL002D |
4 NOR gates with 2 inputs each (TTL low-power Schottky series), possibly equivalent SN74LS02N |
RFT |
108 |
DL003D |
4 NAND gates with 2 inputs each, open collector outputs (TTL low-power Schottky series), possibly equivalent SN74LS03N |
RFT |
109 |
DL037D |
4 NAND power gates with 2 inputs (TTL low-power Schottky series), possibly equivalent SN74LS37N |
RFT |
110 |
DL038D |
4 NAND power gates with 2 inputs, open collector exits (TTL low-power Schottky series), possibly equivalent SN74LS38N |
RFT |
111 |
DS2502-E64 |
IEEE EUI-64 Node Address Chip |
Dallas Semiconductor |
112 |
DS2502-E64 |
IEEE EUI-64 Node Address Chip |
MAXIM - Dallas Semiconductor |
113 |
DS2502-E64+ |
IEEE EUI-64 Node Address Chip |
MAXIM - Dallas Semiconductor |
114 |
DS2502P-E64 |
IEEE EUI-64 Node Address Chip |
Dallas Semiconductor |
115 |
DS2502P-E64 |
IEEE EUI-64 Node Address Chip |
MAXIM - Dallas Semiconductor |
116 |
E100D |
4 NAND gates with 2 inputs each, possibly equivalent SN8400N |
RFT |
117 |
E103D |
4 NAND gates with 2 inputs each, collector open, possibly equivalent SN8403N |
RFT |
118 |
E126D |
4 NAND gates with 2 inputs each, collector open, 15V output blocking voltage, possibly equivalent SN8426N |
RFT |
119 |
E2502H28 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1554.94 nm. Frequency 192.8 THz. |
Agere Systems |
120 |
E2502H43 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1542.94 nm. Frequency 194.3 THz. |
Agere Systems |
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