No. |
Part Name |
Description |
Manufacturer |
91 |
EM564161BA-85 |
256K x 16 Low Power SRAM |
Etron Tech |
92 |
EM564161BA-85E |
256K x 16 Low Power SRAM |
Etron Tech |
93 |
EM564161BC-70 |
256K x 16 Low Power SRAM |
Etron Tech |
94 |
EM564161BC-85 |
256K x 16 Low Power SRAM |
Etron Tech |
95 |
EXBU14161JX |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
96 |
EXBU24161JX |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
97 |
EXBU34161JV |
Resistor Network - Anti-Sulfurated Chip Resistor Array |
Panasonic |
98 |
FIC03272 |
Microprocessor for handling signals from the TGS4161 carbon dioxide sensor |
etc |
99 |
HD14161B |
Decade / 4-Bit binary Counters with Clear |
Hitachi Semiconductor |
100 |
HD74161 |
(HD74 Series) IC |
Hitachi Semiconductor |
101 |
ITT54161 |
Synchronous 4-bit counters with direct clear |
ITT Semiconductors |
102 |
ITT74161 |
Synchronous 4-bit counters with direct clear |
ITT Semiconductors |
103 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
104 |
K4E641612B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
105 |
K4E641612B-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
106 |
K4E641612B-TC |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
107 |
K4E641612B-TC45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
108 |
K4E641612B-TC50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
109 |
K4E641612B-TC60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
110 |
K4E641612B-TL45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
111 |
K4E641612B-TL50 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
112 |
K4E641612B-TL60 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
113 |
K4E641612C |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
114 |
K4E641612C-45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
115 |
K4E641612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
116 |
K4E641612C-60 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
117 |
K4E641612C-L |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
118 |
K4E641612C-T |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
119 |
K4E641612C-T45 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
120 |
K4E641612C-T50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
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